TITLE

Wave-shaped Si crystal wafers obtained by plastic deformation and preparation of their solar cells

AUTHOR(S)
Kazuo Nakajima; Kozo Fujiwara; Wugen Pan
PUB. DATE
December 2004
SOURCE
Applied Physics Letters;12/13/2004, Vol. 85 Issue 24, p5896
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We can prepare wave-shaped crystal wafers by the plastic deformation of Si crystal wafers, and we report on the characteristics of solar cells fabricated using the wave-shaped Si wafers, in order to demonstrate whether the shaped wafers are of high quality to be used in the preparation of devices or not. To obtain wave-shaped Si wafers, graphite dies were used. The diameter of the convex and concave waves formed in the dies is 4 mm. The Si wafers were pressed by an overload of 200 N. A thickness versus temperature region for obtaining well wave-shaped Si wafers by plastic deformation was determined. Solar cells were prepared using wave-shaped wafers pressed at 1100 and 1200 °C. The wafers were annealed at 1109 and 1209 °C, respectively, for 1 h in a hydrogen atmosphere. The conversion efficiency of the wave-shaped solar cells is 6.0%–10.1%. Thus, it is clarified that the wave-shaped wafers are of high quality to be used in the preparation of devices. The quality of the wafers can be significantly improved by suitable thermal treatments.
ACCESSION #
15331874

 

Related Articles

  • Effects of the compensation level on the carrier lifetime of crystalline silicon. Dubois, S.; Enjalbert, N.; Garandet, J. P. // Applied Physics Letters;7/21/2008, Vol. 93 Issue 3, p032114 

    This study focuses on the evolution of the carrier lifetime with the compensation level in crystalline silicon. Especially we show that an increase in the compensation level reduces the recombination strength of doping species and of some metal impurities. These theoretical results are confirmed...

  • Nanoindentation tests on diamond-machined silicon wafers. Jiwang Yan; Takahashi, Hirokazu; Tamaki, Jun'ichi; Xiaohui Gai; Harada, Hirofumi; Patten, John // Applied Physics Letters;5/2/2005, Vol. 86 Issue 18, p181913 

    Nanoindentation tests were performed on ultraprecision diamond-turned silicon wafers and the results were compared with those of pristine silicon wafers. Remarkable differences were found between the two kinds of test results in terms of load-displacement characteristics and indent topologies....

  • Development of preferentially current-generating silicon solar cells. Silard, Andrei; Pera, Florin; Nani, Gabriel // Applied Physics Letters;3/10/1986, Vol. 48 Issue 10, p673 

    The work reports the development of ‘‘preferentially current-generating’’ p+-n-n+ silicon solar cells. The distinctive trait of developed devices is their extremely large short-circuit current density Jsc=38–39.7 mA/cm2, which is the highest value of Jsc reported...

  • SEMI SMG Reports Q2 Shipments.  // Advanced Packaging;Nov2003, Vol. 12 Issue 11, p12 

    Reports on the quarterly analysis of the silicon wafer industry conducted by SEMI Silicon Manufacturers Group (SMG) indicating that worldwide silicon wafer area shipments increased by eight percent during the second quarter of 2003 when compared to the first quarter. Background on SMG; Total...

  • Keeping data safe: Blow it up.  // R&D Magazine;Feb2002, Vol. 44 Issue 2, p13 

    Presents information on silicon wafers, a raw material for computer chips that can be turned into tiny explosives, according to chemists at the University of San Diego, California. Composition of the silicon wafers; Role of gadolinium and silicon-based explosives in the chemical analysis of...

  • Electronically activated boron-oxygen-related recombination centers in crystalline silicon. Bothe, Karsten; Schmidt, Jan // Journal of Applied Physics;1/1/2006, Vol. 99 Issue 1, p013701 

    Two different boron- and oxygen-related recombination centers are found to be activated in crystalline silicon under illumination or electron injection in the dark, both leading to a severe degradation in the carrier lifetime. While one center forms on a time scale of seconds to minutes, the...

  • Minority charge carrier lifetime mapping of crystalline silicon wafers by time-resolved photoluminescence imaging. Kiliani, David; Micard, Gabriel; Steuer, Benjamin; Raabe, Bernd; Herguth, Axel; Hahn, Giso // Journal of Applied Physics;Sep2011, Vol. 110 Issue 5, p054508 

    A camera-based method to record spatially and time-resolved photoluminescence images of crystalline silicon wafers was developed. The camera signal is modulated by a rotating shutter wheel, allowing for a wide range of camera types to be used for the measurement and easy integration into...

  • Identification of a moving phase of Al[sub 2]O[sub 3] by Auger electron spectroscopy in the back.... Chakravarty, B.C.; Arora, N.K. // Applied Physics Letters;5/23/1994, Vol. 64 Issue 21, p2847 

    Examines the moving phase of Al[sub 2]O[sub 3] in the backsurface aluminization of silicon solar cells through Auger electron spectroscopy. Depth profiles of silicon wafers; Details of surface etching parameters with argon ion sputtering; Formation of oxidized aluminum and alloy of aluminum and...

  • Fabrication of SnO2:As/SiO2/n-Si (textured) (semiconductor/insulator/semiconductor) solar cells by chemical vapor deposition. Vishwakarma, S. R.; Rahmatullah; Prasad, H. C. // Journal of Applied Physics;12/15/1991, Vol. 70 Issue 12, p7474 

    Discusses the fabrication of semiconductor/insulator/semiconductor solar cells on single silicon crystal. Wafers used; Result and discussion.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics