Band alignment between (100)Si and complex rare earth/transition metal oxides

Afanas'ev, V. V.; Stesmans, A.; Zhao, C.; Caymax, M.; Heeg, T.; Schubert, J.; Jia, Y.; Schlom, D. G.; Lucovsky, G.
December 2004
Applied Physics Letters;12/13/2004, Vol. 85 Issue 24, p5917
Academic Journal
The electron energy band alignment between (100)Si and several complex transition/rare earth (RE) metal oxides (LaScO3, GdScO3, DyScO3, and LaAlO3, all in amorphous form) is determined using a combination of internal photoemission and photoconductivity measurements. The band gap width is nearly the same in all the oxides (5.6–5.7 eV) yielding the conduction and valence band offsets at the Si/oxide interface of 2.0±0.1 and 2.5±0.1 eV, respectively. However, band-tail states are observed and these are associated with Jahn-Teller relaxation of transition metal and RE cations which splits their d* states.


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