A growth pathway for highly ordered quantum dot arrays

Liang, Jianyu; Luo, Hailin; Beresford, Rod; Xu, Jimmy
December 2004
Applied Physics Letters;12/13/2004, Vol. 85 Issue 24, p5974
Academic Journal
To realize the desired zero-dimensional behavior of a quantum dot ensemble, the ability to fabricate quantum dots with a high packing density and a high degree of size, shape, and spacing uniformity is crucial. Here we report highly ordered InAs nanodot arrays grown by molecular-beam epitaxy on nonlithographically nanopatterned GaAs. Approximately 20 billion dots are grown in a 1 cm2 area with the smallest size dispersion ever reported and forming a lateral superlattice in hexagonal dense packing form. These techniques presage a pathway to controlled growth of periodic quantum dot superstructures, which offer macroscopic spatial coherence in the interaction of quantum dots with radiation.


Related Articles

  • High-speed 1.3 μm tunnel injection quantum-dot lasers. Mi, Z.; Bhattacharya, P.; Fathpour, S. // Applied Physics Letters;4/11/2005, Vol. 86 Issue 15, p153109 

    1.3 μm tunnel injection quantum-dot lasers are demonstrated. The laser heterostructures are grown by molecular-beam epitaxy. The InAs self-organized quantum dots are p doped to optimize the gain. The lasers are characterized by Jth=180 A/cm2, T0=∞, dg/dn≈1×10-14 cm2, f-3dB=11...

  • Step bunch assisted two dimensional ordering of In0.19Ga0.81As/GaAs quantum dots on vicinal GaAs(001) surfaces. Hanke, M.; Wang, Zh. M.; Mazur, Yu. I.; Lee, J. H.; Salamo, G. J.; Schmidbauer, M. // Applied Physics Letters;1/21/2008, Vol. 92 Issue 3, p033111 

    We have investigated the self-organized, step bunch assisted formation of In0.19Ga0.81As/GaAs quantum dots in vertical superlattices consisting of one, four, eight, and ten periods. Samples were grown by molecular beam epitaxy on vicinal 2°A and 2°B GaAs(001) substrates. Those with miscut...

  • Fabrication of coupled quantum disks on a patterned substrate by MBE. Yamaguchi, M.; Higuchi, Y.; Nishimoto, Y.; Sawaki, N. // AIP Conference Proceedings;2005, Vol. 772 Issue 1, p595 

    A coupled quantum disk, where two kinds of rectangular disks are connected by a narrow stripe, was fabricated on a patterned substrate with molecular beam epitaxy. The samples were characterized with cathode luminescence (CL) spectra. We found that the spectral peak wavelength depends on size of...

  • Characterization of the morphology and optical properties of InAs/AlAs quantum dots with a GaAs insertion layer. Roh, Cheong Hyun; Song, Hong Joo; Kim, Dong Ho; Park, Joon Soo; Choi, Yeon-Shik; Kim, Hoon; Hahn, Cheol-Koo // Journal of Applied Physics;3/15/2007, Vol. 101 Issue 6, p064320 

    InAs self-assembled quantum dots by utilizing a thin GaAs insertion layer (IL) on a 1 nm thick AlAs seed layer were grown on GaAs(100) substrates by using a molecular beam epitaxy technique. InAs quantum dots (QDs) were formed by varying the thickness of the GaAs IL from 1 to 9 ML (monolayer),...

  • Photoluminescence from low temperature grown InAs/GaAs quantum dots. Sreenivasan, D.; Haverkort, J. E. M.; Eijkemans, T. J.; Nötzel, R. // Applied Physics Letters;3/12/2007, Vol. 90 Issue 11, p112109 

    The authors investigated a set of self-assembled InAs/GaAs quantum dots (QDs) formed by molecular beam epitaxy at low temperature (LT, 250 °C) and postgrowth annealing. A QD photoluminescence (PL) peak around 1.01 eV was observed. The PL efficiency quickly quenches between 6 and 40 K due to...

  • Spontaneous lateral alignment of In[sub 0.25]Ga[sub 0.75]As self-assembled quantum dots on.... Nishi, Kenichi; Anan, Takayoshi // Applied Physics Letters;6/30/1997, Vol. 70 Issue 26, p3579 

    Examines the spontaneous lateral alignment of InGaAs self-assembled quantum dots on (311)B GaAs by gas molecular beam epitaxy. Characterization of the surface structure by atomic force microscopy; Mechanism of the spontaneous alignment; Measurement of the angle between the dot-dot direction and...

  • Defects in nanostructures with ripened InAs/GaAs quantum dots. Nasi, L.; Bocchi, C.; Germini, F.; Prezioso, M.; Gombia, E.; Mosca, R.; Frigeri, P.; Trevisi, G.; Seravalli, L.; Franchi, S. // Journal of Materials Science: Materials in Electronics;Oct2008 Supplement 1, Vol. 19, p96 

    InAs/GaAs quantum dot (QD) structures were grown by molecular beam epitaxy (MBE) with InAs coverages θ continuously graded from 1.5 ML to 2.9 ML. A critical coverage of 2.23 ML is found, above which the islands undergo ripening, which causes a fraction of quantum dots to increase in size and...

  • The effect of misorientation of the GaAs substrate on the properties of InAs quantum dots grown by low-temperature molecular beam epitaxy. Tonkikh, A. A.; Cirlin, G. E.; Polyakov, N. K.; Samsonenko, Yu. B.; Ustinov, V. M.; Zakharov, N. D.; Werner, P.; Talalaev, V. G.; Novikov, B. V. // Semiconductors;May2006, Vol. 40 Issue 5, p587 

    The structural and optical properties of arrays of InAs quantum dots grown on GaAs substrates at relatively low temperatures (250 and 350°C) and with various degrees of misorientation of the surface are studied. It is shown that low-temperature growth is accompanied by the formation of...

  • InAs quantum dots on [formula]. Suzuki, T.; Temko, Y.; Xu, M.C.; Jacobi, K. // Journal of Applied Physics;12/1/2004, Vol. 96 Issue 11, p6398 

    InAs quantum dots (QD5) were prepared by molecular beam epitaxy on GaAs(112)B substrates. Shape and size distribution of the QDs were investigated using in situ scanning tunneling microscopy as function ot preparation temperature between 435 and 550 C. The wetting layer is not flat hut undulated...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics