Characterization of bulk and surface currents in strain-balanced InGaAs quantum-well mesa diodes

Kelleher, C.; Ginige, R.; Corbett, B.; Clarke, G.
December 2004
Applied Physics Letters;12/13/2004, Vol. 85 Issue 24, p6033
Academic Journal
We compare the electrical and optical characteristics of mesa diodes based on In0.62Ga0.38As/In0.45Ga0.55As strain-balanced multiple-quantum wells (SB-MQW) with lattice-matched (LM) In0.53Ga0.47As diodes. The dark current density of the SB-MQW devices is at least an order of magnitude lower than the LM devices for voltages >0.4 V. Sidewall recombination current is only measured on SB-MQW diodes when exposed to a damaging plasma. While radiative recombination current dominates in the SB-MQW diodes, it is less than the diffusive current in the LM diodes for the same applied voltage.


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