Highly sensitive detector for submillimeter wavelength range

Hashiba, H.; Antonov, V.; Kulik, L.; Komiyama, S.; Stanley, C.
December 2004
Applied Physics Letters;12/13/2004, Vol. 85 Issue 24, p6036
Academic Journal
A highly sensitive detector of submillimeter wavelength radiation is reported. The detector consists of a semiconductor quantum dot (QD) and a metallic single-electron transistor (SET). The SET detects change in the potential distribution induced by photon absorption within the QD. We have fabricated and studied this detector at wavelengths longer than 200 μm. High sensitivity, ∼10-20 W/√Hz in terms of noise equivalent power, is found. Further optimization of the detector design is suggested.


Related Articles

  • Double quantum dots as a high sensitive submillimeter-wave detector. Astafiev, O.; Komiyama, S.; Kutsuwa, T. // Applied Physics Letters;8/20/2001, Vol. 79 Issue 8, p1199 

    Examines the importance of double quantum dots (QD) for the detection of submillimeter waves. Operation of QD as a single-electron transistor; Estimate of the detector noise equivalent power; Structure of the device.

  • Photon number resolving detector based on a quantum dot field effect transistor. Kardynał, B. E.; Hees, S. S.; Shields, A. J.; Nicoll, C.; Farrer, I.; Ritchie, D. A. // Applied Physics Letters;4/30/2007, Vol. 90 Issue 18, p181114 

    The authors show that the change in current flowing through the channel of a quantum dot field effect transistor is proportional to the number (N) of photons absorbed from an incident pulse. Distinct features due to photon number state up to N=3 are resolved. With improvement of external quantum...

  • Nano Focus: Room-temperature terahertz detectors fabricated using graphene field-effect transistors. Trohalaki, Steven // MRS Bulletin;Nov2012, Vol. 37 Issue 11, p987 

    The article focuses on a study conducted by researchers L. Vicarelli and his team regarding a new approach to overcome the slow response of commercial terahertz detectors, published in the October issue of the journal "Nature Materials." The study found that field effect transistor is...

  • A single-photon detector in the far-infrared range. Komiyama, S.; Astafiev, O. // Nature;1/27/2000, Vol. 403 Issue 6768, p405 

    Reports on the detection of single far-infrared (FIR) photons using a single electron-transistor consisting of a semiconductor quantum dot in high magnetic field. Wavelength range of the detected FIR; Time resolution; Effective detector area; Mechanism which brings about increased sensitivity...

  • Continuous wave terahertz radiation from an InAs/GaAs quantum-dot photomixer device. Kruczek, T.; Leyman, R.; Carnegie, D.; Bazieva, N.; Erbert, G.; Schulz, S.; Reardon, C.; Rafailov, E. U. // Applied Physics Letters;8/20/2012, Vol. 101 Issue 8, p081114 

    Generation of continuous wave radiation at terahertz (THz) frequencies from a heterodyne source based on quantum-dot (QD) semiconductor materials is reported. The source comprises an active region characterised by multiple alternating photoconductive and QD carrier trapping layers and is pumped...

  • Quantum-dot-transistor counts photons.  // Laser Focus World;Apr2004, Vol. 40 Issue 4, p9 

    Details the characteristics of a quantum-dot field-effect transistor at the heart of a low-noise single-photon detector developed at Toshiba Research Ltd. and Cavendish Laboratory in Cambridge, England. Active region of the cryogenic device; Maximum detection efficiency.

  • Lifetime-limited, subnanosecond terahertz germanium photoconductive detectors. Deßmann, N.; Pavlov, S. G.; Pohl, A.; Abrosimov, N. V.; Winnerl, S.; Mittendorff, M.; Zhukavin, R. Kh.; Tsyplenkov, V. V.; Shengurov, D. V.; Shastin, V. N.; Hübers, H.-W. // Applied Physics Letters;4/30/2015, Vol. 106 Issue 17, p1 

    The recombination times of photo-excited free charge carriers in heavily doped and highly compensated germanium are studied by a time-resolved pump-probe experiment at a frequency of ∼3 THz. The dominant dopant in the germanium samples is either antimony (n-Ge:Ga:Sb) or gallium...

  • High intensity submillimeter photoresponse of a Si inversion layer. Verma, I. B.; Leung, M.; Drew, H. D.; Doezema, R. E.; Furneaux, J. E.; Wagner, R. J. // Applied Physics Letters;7/1/1985, Vol. 47 Issue 1, p57 

    The submillimeter wave (496, 385, and 66 μm) photoresponse has been measured in an n-channel Si metal-oxide-semiconductor field-effect transistor at 4.2 K. A fast (≤10 ns) response is observed only in the low carrier density (ns) regime where the dc conductance is activated. Nonlinear...

  • Room temperature single-electron memory and light sensor with three-dimensionally positioned InAs quantum dots. Göpfert, S.; Worschech, L.; Lingemann, S.; Schneider, C.; Press, D.; Höfling, S.; Forchel, A. // Applied Physics Letters;11/29/2010, Vol. 97 Issue 22, p222112 

    The authors report on the fabrication and characterization of single-electron memories based on site-controlled InAs quantum dots (QDs) embedded in a GaAs/AlGaAs quantum-wire transistor. By using a hole structure template on a modulation-doped GaAs/AlGaAs heterostructure in combination with...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics