TITLE

AlGaN-based 280 nm light-emitting diodes with continuous-wave power exceeding 1 mW at 25 mA

AUTHOR(S)
Zhang, J. P.; Hu, X.; Bilenko, Yu.; Deng, J.; Lunev, A.; Shur, M. S.; Gaska, R.; Shatalov, M.; Yang, J. W.; Khan, M. A.
PUB. DATE
December 2004
SOURCE
Applied Physics Letters;12/6/2004, Vol. 85 Issue 23, p5532
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Optimization of the migration-enhanced metalorganic chemical vapor deposition and further optimization of the contact and active layer design for 280 nm light-emitting diodes resulted in large improvement of cw and pulsed output power and in a superior spectrum purity. The ratio of the main peak to the background luminescence determined by the detection system is higher than 2000:1 at 20 mA dc. The on-wafer cw power was measured to be 255 μW at 20 mA dc. The power popped up exceeding 1 mW for a packaged device under 25 mA dc and 9 mW under pulse 200 mA. The maximum wall-plug-efficiency of 0.67% was obtained for the packaged device at 25 mA dc.
ACCESSION #
15305426

 

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