Near-infrared intersubband transitions in delta-doped InAs/AlSb multi-quantum wells

Sasa, S.; Nakajima, Y.; Nakai, M.; Inoue, M.; Larrabee, D. C.; Kono, J.
December 2004
Applied Physics Letters;12/6/2004, Vol. 85 Issue 23, p5553
Academic Journal
Intersubband transitions (ISBTs) in narrow InAs/AlSb multiple quantum wells (MQWs) were investigated for well widths, d, ranging from 5 nm down to 1.8 nm with 10, 20, or 60 periods. In order to observe a strong ISBT signal, a heavy silicon doping was made in each InAs quantum well. Delta doping was employed for the narrowest wells to prevent silicon incorporation into the AlSb barrier layers. As the well width decreased, the ISBT signal of the MQWs decreased. However, it persisted down to d=2.1 nm with a sheet doping density in each quantum well of 9×1012 cm-2 and 60 periods. The ISBT signal observed for d=2.1 nm was peaked at an energy of 650 and 670 meV at 300 and 77 K, respectively. These are the highest energy values ever observed for ISBTs in InAs/AlSb MQWs.


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