TITLE

Influence of defects on the kinetic of C49–C54 TiSi2 transformation

AUTHOR(S)
La Via, F.; Mammoliti, F.; Grimaldi, M. G.
PUB. DATE
December 2004
SOURCE
Applied Physics Letters;12/6/2004, Vol. 85 Issue 23, p5577
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
TiSi2 C49 thin films with different concentrations of defects have been prepared by conventional annealing, in the 460–540 °C temperature range, of a Ti films deposited on a polycrystalline Si layer. The residual sheet resistance of the C49 films decreased with increasing both the annealing temperature and the annealing duration indicating the occurrence of defect annealing at higher temperature and/or longer times. A successive annealing at 650 °C was used to promote the C49–C54 transition and the transformation rate was measured by in situ sheet resistance measurements. The C49–C54 transition time decreased with the residual sheet resistance of the C49 phase. The activation energy for the transformation increased from 3.09±0.75 to 6.12±0.96 eV with increasing the defect concentration in the C49 phase. This strong dependence can explain the large variation of the kinetic results reported in the literature.
ACCESSION #
15305411

 

Related Articles

  • Effect of Thermal Annealing on Structure, Optical and Electrical Properties of Hot Wall Deposited CuInSe2 Polycrystalline Thin Films. Agilan, S.; Mangalaraj, D.; Narayandass, Sa. K.; Rao, G. Mohan // AIP Conference Proceedings;4/23/2008, Vol. 1004 Issue 1, p33 

    CuInSe2 chalcopyrite thin films were deposited on glass substrates by hot wall deposition method. As grown films are polycrystalline in nature showing diffraction peaks corresponding to CuInSe2 chalcopyrite. After annealing a narrowing and an increasing of intensity of these diffraction peaks...

  • Uniform MgB2 thin films grown on Si(111) and Al2O3(0001) substrates prepared by e-beam evaporation and in situ annealing methods. Yi Bing Zhang; Hong Mei Zhu; Shi Ping Zhou; Shi Ying Ding; Zhi Wei Lin; Jian Guo Zhu // Journal of Applied Physics;4/15/2006, Vol. 99 Issue 8, p08M512 

    MgB2 superconducting thin films on Si(111) and Al2O3(0001) substrates were prepared by high vacuum e-beam evaporation and two-step in situ annealing techniques. The precursor films [B(100 Å)/Mg(151 Å)]6/Al2O3 (or Si) were deposited at room temperature and 1×10-7 mbar of background...

  • Determination of the absolute fluence profile in pulsed laser processing using melt-induced phase changes in an amorphous silicon thin film. Leonard, J. P. // Review of Scientific Instruments;May2006, Vol. 77 Issue 5, p053101 

    A simple silicon-based thin film multilayer configuration is used to obtain measurements of beam profiles in a pulsed excimer projection system with fluence levels similar to melt-mediated materials processing. Abrupt transitions between amorphous and polycrystalline phases are found at the...

  • Influence of lateral crystallization on gate oxide in polycrystalline silicon thin-film transistors. Kang, Il-Suk; Han, Shin-Hee; Joo, Seung-Ki // Applied Physics Letters;11/26/2007, Vol. 91 Issue 22, p222113 

    The phase transformation in a film influences its surrounding. In order to remove influences on gate oxide caused by metal-induced unilateral crystallization, a gate was formed after a lateral crystallization. The thin-film transistor (TFT) by the novel fabrication method was shown to have a...

  • Nucleation and growth of C54 grains into C49 TiSi[sub 2] thin films monitored by micro-Raman imaging. Privitera, S.; La Via, F.; Spinella, C.; Quilici, S.; Borghesi, A.; Meinardi, F.; Grimaldi, M. G.; Rimini, E. // Journal of Applied Physics;12/15/2000, Vol. 88 Issue 12 

    The first-order C49-C54 allotropic-phase transition has been studied in TiSi[sub 2] thin films by electrical measurements and micro-Raman spectroscopy. To evaluate the parameters describing the kinetics of the transition and the barrier energy for the nucleation, micro-Raman spectroscopy has...

  • Effect of Annealing Temperature on Titania Nanoparticles. Manikandan, K.; Arumugam, S.; Chandrasekaran, G. // AIP Conference Proceedings;2014, Vol. 1591, p128 

    Titania polycrystalline samples are prepared by using sol-gel route hydrolyzing a alkoxide titanium precursor under acidic conditions. The as prepared samples are treated with different calcination temperatures. The anatase phase of titania forms when treated below 600°C, above that...

  • Grain size analysis of C54–TiSi[sub 2] under different processing conditions for deep-submicron polycrystalline silicon gate length. Pang, C. H.; Hing, P.; See, A.; Chong, Y. F. // Journal of Applied Physics;10/1/2003, Vol. 94 Issue 7, p4596 

    The effect of preamorphization using silicon (Si) ion, different annealing temperatures and heating rates on nucleation density and grain size of C49 and C54–TiSi[sub 2] have been studied. The average grain size of C54–TiSi[sub 2] is found to decrease when the peak annealing...

  • MORPHOLOGY AND FRACTAL DIMENSION OF TiO2 THIN FILMS. Petrović, Srđan; Rožić, Ljiljana; Grbić, Boško; Radić, Nenad; Dostanić, Jasmina; Stojadinović, Stevan; Vasilić, Rastko // Macedonian Journal of Chemistry & Chemical Engineering;2013, Vol. 32 Issue 2, p309 

    The influence of annealing temperature on the morphology and surface fractal dimension of titanium dioxide (TiO2) films prepared via the spray deposition process was investigated. Thin films with various morphologies were obtained at different temperatures and characterized by X-ray diffraction...

  • Crystallization behavior of amorphous Alx(Ge2Sb2Te5)1-x thin films. Jae-Hee Seo; Ki-Ho Song; Hyun-Yong Lee // Journal of Applied Physics;Oct2010, Vol. 108 Issue 6, p064515 

    Crystallization properties of thermally deposited amorphous Alx(Ge2Sb2Te5)1-x (x=0.06 and 0.10) films were investigated. The crystallization was performed by both macroscopic thermal annealing and nanopulse laser illumination (λ=658 nm and beam diameter <2 μm). The Al0.10(Ge2Sb2Te5)0.90...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics