Density profiles and electrical properties of thermally grown oxide nanofilms on p-type 6H–SiC(0001)

Hazra, S.; Chakraborty, S.; Lai, P. T.
December 2004
Applied Physics Letters;12/6/2004, Vol. 85 Issue 23, p5580
Academic Journal
Thermally grown silicon oxide films on p-type 6H–silicon carbide substrate under different oxidation and nitridation conditions have been characterized by x-ray reflectivity technique. An electron density profile obtained from the analysis of the x-ray reflectivity data shows that the thickness, density of the oxide film, and structure of the oxide-SiC interface strongly depend on the different growth conditions. In particular, the density of the oxide film for all samples other than that grown in NO is found to be much lower and also not fixed within. It is maximum at the interface and gradually decreases toward the top in all samples except for the sample grown in O2 followed by NO nitridation. For the latter, a very low density at the interface region has been observed. The sample grown in NO shows the best performance in capacitance–voltage characteristic and reliability studies suggesting that the bad performance of the oxide grown on the p-type SiC system as metal–oxide–semiconductor devices, is mainly linked to the low-density oxide film and can be overcome under proper growth condition.


Related Articles

  • Investigation of ProTEX PSB Thin Film as Photosensitive Layer for MEMS capacitive pressure sensor diaphragm based Si/SiC Wafer. Marsi, Noraini; Majlis, Burhanuddin Yeop; Hamzah, Azrul Azlan; Mohd-Yasin, Faisal // Australian Journal of Basic & Applied Sciences;Oct2013, Vol. 7 Issue 12, p315 

    Characterization of ProTEX® PSB thin films of newly developed photosensitive layer as alternative replacement for silicon nitride or silicon oxide wet etch masks. ProTEX® PSB thin films have been deposited on Si/SiC wafer for bulk micromachining technology in MEMS capacitive pressure...

  • Characterization of silicon dioxide films on 4H-SiC Si (0001) face by cathodoluminescence spectroscopy and x-ray photoelectron spectroscopy. Yoshikawa, M.; Ogawa, S.; Inoue, K.; Seki, H.; Tanahashi, Y.; Sako, H.; Nanen, Y.; Kato, M.; Kimoto, T. // Applied Physics Letters;2/20/2012, Vol. 100 Issue 8, p082105 

    We measured cathodoluminescence (CL) spectra of SiO2 films grown on 4H-SiC wafers and found that for an acceleration voltage of 5 kV, CL peaks at 460 and 490 nm, assigned to oxygen vacancy centers (OVCs), become weak by post-oxidation annealing in N2O ambient at 1300 °C whereas the CL peak...

  • Characterization of HfO2 films deposited on 4H-SiC by atomic layer deposition. Wolborski, Maciej; Rooth, Mårten; Bakowski, Mietek; Hallén, Anders // Journal of Applied Physics;6/15/2007, Vol. 101 Issue 12, p124105 

    Hafnium oxide films with a measured relative dielectric constant of 15.4 were deposited at room temperature on Si and 4H-SiC substrates, as well as on 4H-SiC p-i-n diodes. An 8 nm thick SiO2 interfacial layer on SiC increased the breakdown field of the HfO2/SiO2 stack by 6%, while a 13 nm thick...

  • Determination of density profile of ultrathin SiO2/Si3N4/SiO2/Si(001) multilayer structures using x-ray reflectivity technique. Banerjee, S.; Ferrari, S.; Piagge, R.; Spandoni, S. // Applied Physics Letters;5/10/2004, Vol. 84 Issue 19, p3798 

    In this report, we present an analysis of a SiO2/Si3N4/SiO2/Si(001) ultrathin multilayer structure using the x-ray reflectivity technique. The trilayer was grown using low-pressure chemical vapor deposition with each layer having a nominal thickness of ∼50 Å. Here, we propose an...

  • Capacitance analysis for a metal�insulator� semiconductor structure with an ultra-thin oxide layer. Fu, Y.; Willander, M. // Applied Physics A: Materials Science & Processing;2003, Vol. 76 Issue 1, p27 

    We have studied theoretically the capacitance characteristics of a metal�insulator�semiconductor structure with an ultra-thin oxide layer by self-consistently solving Schr�dinger and Poisson equations. It is demonstrated that a �diffused� interface between Si and SiO[sub...

  • XRay Study of Transfer Printed Pentacene Thin Films. Shao, Y.; Solin, S. A.; Hines, D. R.; Williams, E. D. // AIP Conference Proceedings;2007, Vol. 893 Issue 1, p371 

    We investigated the structural properties and transfer properties of pentacene thin films fabricated by thermal deposition and transfer printing onto SiO2 and plastic substrates, respectively. The dependence of the crystallite size on the printing time, temperature and pressure were measured....

  • Sequential thermal treatments of SiC in NO and O2: Atomic transport and electrical characteristics. Soares, G. V.; Baumvol, I. J. R.; Hold, L.; Kong, F.; Han, J.; Dimitrijev, S.; Radtke, C.; Stedile, F. C. // Applied Physics Letters;7/23/2007, Vol. 91 Issue 4, p041906 

    Sequential thermal oxidations and oxynitridations of SiC were performed using 18O2 and NO. The resulting films were characterized by x-ray photoelectron spectroscopy, ion beam analyses, and capacitance-voltage measurements. The best electrical characteristics were obtained from films directly...

  • Effect of gas atmosphere on the formation of silicon by reaction of SiC and SiO. Li, Xiang; Zhang, Guangqing; Ostrovski, Oleg; Tronstad, Ragnar // Journal of Materials Science;Jan2016, Vol. 51 Issue 2, p876 

    The formation of silicon by reaction between quartz and SiC has been studied in the temperature range of 1600-1900 °C in argon and hydrogen atmospheres. The reaction process was monitored by an infrared gas analyzer, and the reaction products were characterized by LECO, XRD, and SEM....

  • SiC/SiO[sub 2] interface states observed by x-ray photoelectron spectroscopy measurements under bias. Sakurai, Takeaki; de Vasconcelos, Elder A.; Katsube, Teruaki; Nishioka, Yasushiro; Kobayashi, Hikaru // Applied Physics Letters;1/1/2001, Vol. 78 Issue 1, p96 

    Energy distribution of interface states at an ultrathin SiO[sub 2]/SiC interface is obtained by means of x-ray photoelectron spectroscopy (XPS) under bias. The substrate Si 2p peak shows a reversible energy shift by the application of a bias voltage to SiC with respect to the Pt layer of the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics