Effect of Bi surfactant on atomic ordering of GaAsSb

Jiang, W. Y.; Liu, J. Q.; So, M. G.; Rao, T. S.; Thewalt, M.; Kavanagh, K. L.; Watkins, S. P.
December 2004
Applied Physics Letters;12/6/2004, Vol. 85 Issue 23, p5589
Academic Journal
The addition of small quantities of a Bi surfactant is shown to have dramatic effects on the microstructure of GaAsSb alloys grown by organometallic vapor phase epitaxy (OMVPE). Epilayers grown without Bi show weak atomic ordering in plan-view selective area electron diffraction measurements, with periodicity of three or six times the [110] lattice spacing as previously reported. The addition of Bi at a ratio of 1% Bi/Ga to the gas flow results in the appearance of strong CuAu and chalcopyrite ordering, as determined from electron diffraction measurements in both undoped, and heavily carbon doped layers. High-resolution, transmission electron microscopy lattice images clearly show the coexistence of {100}, {210} ordered and disordered structures with domain sizes of ∼10–20 nm. Photoluminescence shows no band gap changes in GaAsSb samples with and without {100} and {210} ordering.


Related Articles

  • Elastic strains influence during GaSb/InAs heteroepitaxy from liquid phase. Shutov, S. V.; Baganov, Ye. A. // Semiconductor Physics, Quantum Electronics & Optoelectronics;2006, Vol. 9 Issue 1, p84 

    Influence of strains that appear in GaSb/InAs heterosystem on heteroepitaxial layer planarity is considered. It is shown that minimal supercooling of solution-melt at the saturation temperature of gallium antimonide in gallium melt 450 °C is 7.8 °? for [111] and 5.8 °? for [100] growth...

  • Ferromagnetism and the electronic band structure in (Ga,Mn)(Bi,As) epitaxial layers. Yastrubchak, O.; Sadowski, J.; Gluba, L.; Domagala, J. Z.; Rawski, M.; Żuk, J.; Kulik, M.; Andrearczyk, T.; Wosinski, T. // Applied Physics Letters;8/18/2014, Vol. 105 Issue 7, p1 

    Impact of Bi incorporation into (Ga,Mn)As layers on their electronic- and band-structures as well as their magnetic and structural properties has been studied. Homogenous (Ga,Mn)(Bi,As) layers of high structural perfection have been grown by the low-temperature molecular-beam epitaxy technique....

  • Doping and residual impurities in GaAs layers grown by close-spaced vapor transport. Le Bel, C.; Cossement, D.; Dodelet, J. P.; Leonelli, R.; DePuydt, Y.; Bertrand, P. // Journal of Applied Physics;2/1/1993, Vol. 73 Issue 3, p1288 

    Presents information on a study which used the close-spaced vapor transport technique to grow gallium arsenic epitaxial layers. Experimental proecures; Results; Discussion.

  • ErSb/GaSb(001) and GaSb/ErSb/GaSb(001) heterostructures and [ErSb,GaSb] superlattices: Molecular beam epitaxy growth and characterization. Guivarc’h, A.; Ballini, Y.; Toudic, Y.; Minier, M.; Auvray, P.; Guenais, B.; Caulet, J.; Le Merdy, B.; Lambert, B.; Regreny, A. // Journal of Applied Physics;3/15/1994, Vol. 75 Issue 6, p2876 

    Focuses on a study which demonstrated the growth of erbium antimony (001) single crystal layers on gallium antimony (001) substrates. Growth and characterization of erbium antimony/gallium antimony (001) heterostructures; Growth characteristics of gallium arsenide; Superlattices of erbium...

  • Liquid-phase-epitaxial InAsySb1-y on GaSb substrates using GaInAsSb buffer layers: Growth, characterization, and application to mid-IR photodiodes. Zyskind, J. L.; Srivastava, A. K.; DeWinter, J. C.; Pollack, M. A.; Sulhoff, J. W. // Journal of Applied Physics;4/15/1987, Vol. 61 Issue 8, p2898 

    Presents a study which investigated the growth of device quality InAs[suby] Sb[sub1-y] on (100)-oriented gallium antimony substrates by the use of intermediate buffer layers. Reason for using buffer layers; Methods used to characterize buffer layers; Difficulty faced in the growth of...

  • High mobility two-dimensional hole system in GaAs/AlGaAs quantum wells grown on (100) GaAs substrates. Manfra, M. J.; Pfeiffer, L. N.; West, K. W.; de Picciotto, R.; Baldwin, K. W. // Applied Physics Letters;4/18/2005, Vol. 86 Issue 16, p162106 

    We report on the transport properties of a high mobility two-dimensional hole system (2DHS) confined in GaAs/AlGaAs quantum wells grown by molecular-beam epitaxy on the (100) surface of GaAs. The quantum wells are modulation doped with carbon utilizing a resistive filament source. At T=0.3 K and...

  • Reduced subpicosecond electron relaxation in GaNxAs1-x. Sinning, S.; Dekorsy, T.; Helm, M.; Mussler, G.; Däweritz, L.; Ploog, K. H. // Applied Physics Letters;4/18/2005, Vol. 86 Issue 16, p161912 

    We report on time resolved femtosecond carrier dynamics in molecular beam epitaxy grown GaNxAs1-x with a nitrogen fraction of 1.3%. The intraband carrier relaxation time in GaNxAs1-x is found to be significantly larger than in GaAs. We compare the experimental results with carrier-polar optical...

  • Optical properties of GaSb alloys and photodiodes grown by liquid-phase epitaxy. Sun, Yuh-Maoh; Jiang, Wen-Jang; Wu, Meng-Chyi // Journal of Applied Physics;8/1/1996, Vol. 80 Issue 3, p1731 

    Presents information on a study which described the detailed electrical and optical properties of gallium antimonide layers grown by liquid-phase epitaxy from antimony-rich solutions. Background of the study; Methodology of the study; Results and discussion of the study.

  • Effect of Pb ions on the optical absorption in Gd3Ga5O12 epitaxial films. Vasil'eva, N.; Randoshkin, V.; Plotnichenko, V.; Pyrkov, Yu.; Voronov, V.; Galstyan, A.; Sysoev, N. // Inorganic Materials;Jan2008, Vol. 44 Issue 1, p76 

    We have studied the effect of Pb2+ impurities and Pb2+-Pb4+ pairs on the optical absorption between 200 and 860 nm in single-crystal gadolinium gallium garnet films grown by liquid-phase epitaxy from supercooled PbO-B2O3 fluxed melts containing 0.1–0.5 mol% gadolinia.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics