TITLE

Effect of Bi surfactant on atomic ordering of GaAsSb

AUTHOR(S)
Jiang, W. Y.; Liu, J. Q.; So, M. G.; Rao, T. S.; Thewalt, M.; Kavanagh, K. L.; Watkins, S. P.
PUB. DATE
December 2004
SOURCE
Applied Physics Letters;12/6/2004, Vol. 85 Issue 23, p5589
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The addition of small quantities of a Bi surfactant is shown to have dramatic effects on the microstructure of GaAsSb alloys grown by organometallic vapor phase epitaxy (OMVPE). Epilayers grown without Bi show weak atomic ordering in plan-view selective area electron diffraction measurements, with periodicity of three or six times the [110] lattice spacing as previously reported. The addition of Bi at a ratio of 1% Bi/Ga to the gas flow results in the appearance of strong CuAu and chalcopyrite ordering, as determined from electron diffraction measurements in both undoped, and heavily carbon doped layers. High-resolution, transmission electron microscopy lattice images clearly show the coexistence of {100}, {210} ordered and disordered structures with domain sizes of ∼10–20 nm. Photoluminescence shows no band gap changes in GaAsSb samples with and without {100} and {210} ordering.
ACCESSION #
15305407

 

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