Dimensional structural transition in CdTe/CdxZn1-xTe nanostructures

Lee, H. S.; Park, H. L.; Kim, T. W.
December 2004
Applied Physics Letters;12/6/2004, Vol. 85 Issue 23, p5598
Academic Journal
CdTe nanostructures were grown on CdxZn1-xTe buffer layers by using molecular-beam epitaxy and atomic-layer epitaxy. The atomic force microscopy image showed that uniform CdTe quantum dots were formed on ZnTe buffer layer. Photoluminescence measurements showed that the excitonic peak corresponding to the interband transitions from the ground electronic subband to the ground heavy-hole band in the CdTe/CdxZn1-xTe nanostructure shifted to a higher energy with increasing Cd mole fraction. The activation energy of the electrons confined in the CdTe/ZnTe quantum dots was higher than those of electrons in CdTe/CdxZn1-xTe nanostructures. These results can help improve understanding of the dimensional structural transition in CdTe/CdxZn1-xTe nanostructures.


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