Thermally stimulated current in self-organized InAs quantum dots

Fan, J. C.; Wang, Y. C.; Chen, I. S.; Hsiao, K. J.; Chen, Y. F.
December 2004
Applied Physics Letters;12/6/2004, Vol. 85 Issue 23, p5604
Academic Journal
We have measured the thermally stimulated current from self-organized InAs quantum dots grown by molecular-beam epitaxy. The glow curve exhibits peaks at 43, 82, and 127 K with accompanying attenuated current oscillations at 107 K. Based on the excitation energy above and below the GaAs band gap, the oscillations are ascribed to AsGa-related point defects in the conduction GaAs matrix. By comparing with the photoluminescence and photoconductivity measurements, we conclude that the peaks at 82 and 43 K arise from the electron trapping in the InAs quantum dots. We point out that the technique of thermally stimulated current provides a simple alternative method to obtain the energy levels in self-organized quantum-dot systems.


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