Al–Si multilayers: A synthetic material with large thermoelectric anisotropy

Kyarad, A.; Lengfellner, H.
December 2004
Applied Physics Letters;12/6/2004, Vol. 85 Issue 23, p5613
Academic Journal
A synthetic material with large thermoelectric anisotropy has been prepared from a metal–semiconductor multilayer structure. By an alloying process, a multilayer stack A–B–A…, where A and B are pure aluminum and n-silicon, is produced with a thermoelectric anisotropy ΔS=S∥-S⊥≅1.5 mV/K, where S∥ and S⊥ are the absolute Seebeck coefficients along and perpendicular to the layers, respectively. The use of this synthetic material for light sensing applications is demonstrated.


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