Conductivity and Hall effect of free-standing highly resistive epitaxial GaN:Fe substrates

Kordoš, P.; Morvic, M.; Betko, J.; Novák, J.; Flynn, J.; Brandes, G. R.
December 2004
Applied Physics Letters;12/6/2004, Vol. 85 Issue 23, p5616
Academic Journal
Free-standing highly resistive Fe-doped GaN layers grown by hydride vapor phase epitaxy were characterized by temperature-dependent conductivity and Hall effect measurements. Samples with a room-temperature resistivity of 1.6×107–6×108 Ω cm and a Hall mobility of ∼330 cm2 V-1 s-1 showed simple band conduction with the mobility power x=-1.5 and an activation energy 0.58–0.60 eV, which can be attributed to a Fe acceptor. Samples with a lower mobility, ≤10 cm2 V-1 s-1, exhibited an increase of the mobility with temperature. Here, the conduction seems to be strongly influenced by potential barriers at inhomogeneities, with an activation energy of 0.21 eV and a barrier height of 0.14–0.18 eV. The activation energy 0.36 and 0.40 eV, evaluated from the resistivity measurements, does not correspond to that of the Fe acceptor.


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