TITLE

Magnetic-field-controllable avalanche breakdown and giant magnetoresistive effects in Gold/semi-insulating-GaAs Schottky diode

AUTHOR(S)
Sun, Z. G.; Mizuguchi, M.; Manago, T.; Akinaga, H.
PUB. DATE
December 2004
SOURCE
Applied Physics Letters;12/6/2004, Vol. 85 Issue 23, p5643
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Gold (Au)/semi-insulating (SI)-GaAs Schottky diode was fabricated by the standard photolithography method using wet etching. Magnetic-field-dependent avalanche breakdown phenomena were observed in the current–voltage curves measured under magnetic field. The avalanche breakdown due to impact ionization was postponed to higher electrical field under applied magnetic field. Accordingly, threshold voltages of avalanche breakdown increased with the applied magnetic field. Above 0.2 T, avalanche breakdown was totally quenched. When Au-SI-GaAs Schottky diode was operated above the threshold voltage, giant mangetoresistive effects up to 100 000% were achieved under magnetic field of 0.8 T.
ACCESSION #
15305390

 

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