Structure evolution and ferroelectric and dielectric properties of Bi3.5Nd0.5Ti3O12 thin films under a moderate temperature annealing

Zhong, X. L.; Wang, J. B.; Zheng, X. J.; Zhou, Y. C.; Yang, G. W.
December 2004
Applied Physics Letters;12/6/2004, Vol. 85 Issue 23, p5661
Academic Journal
Bi3.5Nd0.5Ti3O12 (BNT) ferroelectric thin films were fabricated on Pt/Ti/SiO2/Si(100) substrates by chemical solution deposition. Structure evolution and ferroelectric and dielectric properties of the as-prepared thin films under a moderate temperature (600–750 °C) annealing were studied in detail. The experimental results showed that the BNT thin films annealed at 700 °C exhibit preferred (00l) orientation, and the remnant polarization (2Pr) and dielectric constant ([variant_greek_epsilon]r) are higher (the values of 2Pr and [variant_greek_epsilon]r at 100 kHz are 54 μC/cm2 and 448, respectively) than those of the deposited films annealed at other temperatures. Additionally, the mechanism concerning the dependence of electrical properties of the BNT ferroelectric thin films on the annealing temperature was discussed.


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