TITLE

Universal shapes of self-organized semiconductor quantum dots: Striking similarities between InAs/GaAs(001) and Ge/Si(001)

AUTHOR(S)
Costantini, G.; Rastelli, A.; Manzano, C.; Songmuang, R.; Schmidt, O. G.; Kern, K.; Känel, H. von
PUB. DATE
December 2004
SOURCE
Applied Physics Letters;12/6/2004, Vol. 85 Issue 23, p5673
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The model systems for self-organized quantum dots formed from elemental and compound semiconductors, namely Ge grown on Si(001) and InAs on GaAs(001), are comparatively studied by scanning tunneling microscopy. It is shown that in both material combinations only two well-defined families of faceted and defect-free nanocrystals exist (and coexist). These three-dimensional islands, pyramids, and domes show common morphological characteristics, independent of the specific material system. A universal behavior is further demonstrated in the capping-passivation process that turns the nanocrystals in true quantum dots.
ACCESSION #
15305379

 

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