Parallel writing on zirconium nitride thin films by local oxidation nanolithography

Farkas, N.; Comer, J. R.; Zhang, G.; Evans, E. A.; Ramsier, R. D.; Wight, S.; Dagata, J. A.
December 2004
Applied Physics Letters;12/6/2004, Vol. 85 Issue 23, p5691
Academic Journal
Parallel pattern transfer of submicrometer-scale oxide features onto zirconium nitride thin films is reported. The oxidation reaction was verified by Auger microprobe analysis and secondary ion mass spectrometry. Oxide features of ∼70 nm in height can be formed and selectively etched in a dilute aqueous hydrogen fluoride solution. This provides an interesting route to potential new applications for high-melting point, biocompatible surfaces that possess small feature sizes with controlled geometries.


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