Ordered growth of germanium hut islands on Si (001) molecular bonded substrates

Poydenot, V.; Dujardin, R.; Rouvière, J. L.; Barski, A.; Fournel, F.
December 2004
Applied Physics Letters;12/6/2004, Vol. 85 Issue 23, p5700
Academic Journal
Ordered germanium hut islands are grown by molecular-beam epitaxy on high twist angle molecular bonded silicon (001) substrates (twist angle higher than 20°). We show that the growth organization is induced by an array of interfacial tilt dislocations. Plan-view transmission electron microscopy and atomic force microscopy observations show that the orientation and period of the tilt dislocation array determine the orientation, period, and length of elongated germanium hut islands. The strain field generated by an array of tilt dislocations is proposed as the driving force of the reported organization.


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