Temperature profile and pressure effect on the growth of silicon nanowires

Sau-Wan Cheng; Ho-Fai Cheung
December 2004
Applied Physics Letters;12/6/2004, Vol. 85 Issue 23, p5709
Academic Journal
The excess temperature at the tip of silicon nanowires during their growth is calculated and found to be generally low. Therefore the special adhesive property of the tip cannot be explained by the excess temperature. The effect of surface tension is analyzed and we found that it cannot cause a significant lowering of melting point at the tip. Based on the charge-assisted mechanism proposed earlier by us, we note that charge accumulation at the tip results in a strong negative pressure. We propose that this is the key force driving the nanowire to have only one-dimensional growth.


Related Articles

  • Theoretical phase diagrams of nanowires. Abudukelimu, G.; Guisbiers, G.; Wautelet, M. // Journal of Materials Research;Nov2006, Vol. 21 Issue 11, p13 

    Systems with typical dimensions in the range of 1-100 nm are in an intermediate state between solid and molecular. Such systems are characterized by the fact that the ratio of the number of surface to volume atoms is not small. This is known to lead to size and shape effects on their cohesive...

  • Epitaxial growth of copper nanowire arrays grown on H-terminated Si(110) using glancing-angle deposition. Alouach, H.; Mankey, G. J. // Journal of Materials Research;Dec2004, Vol. 19 Issue 12, p3620 

    We report the growth of epitaxial nanowire arrays using the technique of glancing-angle deposition with substrate rotation. Epitaxial copper nanowire arrays were deposited on H-terminated Si(110) using electron beam evaporation. The nanowire arrays were characterized by x-ray diffraction, atomic...

  • Effect of Si-doping on InAs nanowire transport and morphology. Wirths, S.; Weis, K.; Winden, A.; Sladek, K.; Volk, C.; Alagha, S.; Weirich, T. E.; von der Ahe, M.; Hardtdegen, H.; Lüth, H.; Demarina, N.; Grützmacher, D.; Schäpers, Th. // Journal of Applied Physics;Sep2011, Vol. 110 Issue 5, p053709 

    The effect of Si-doping on the morphology, structure, and transport properties of nanowires was investigated. The nanowires were deposited by selective-area metal organic vapor phase epitaxy in an N2 ambient. It is observed that doping systematically affects the nanowire morphology but not the...

  • Silicon and nickel combine to make conductive nanowires.  // Advanced Materials & Processes;Sep2004, Vol. 162 Issue 9, p18 

    Reports on the combining of silicon and nickel to make conductive nanowires for computer circuits. Specifications; Applications; Contact information.

  • Conductance of Si nanowires formed by breaking Si-Si junctions. Iwanari, Tomoki; Sakata, Toyo; Miyatake, Yutaka; Kurokawa, Shu; Sakai, Akira // Journal of Applied Physics;Dec2007, Vol. 102 Issue 11, p114312 

    We have fabricated Si nanowires (NWs) by breaking Si-Si tip-sample junctions and studied their conductance for both p-n and p-p-type junctions at room temperature. Upon breaking the junction by retracting the Si tip from the Si clean surface, the conductance decreases by orders of magnitude from...

  • Fabrication and characterization of freestanding GaAs/AlGaAs core-shell nanowires and AlGaAs nanotubes by using selective-area metalorganic vapor phase epitaxy. Noborisaka, J.; Motohisa, J.; Hara, S.; Fukui, T. // Applied Physics Letters;8/29/2005, Vol. 87 Issue 9, p093109 

    We fabricated GaAs/AlGaAs core-shell nanowires by using selective-area metalorganic vapor phase epitaxy. First, GaAs nanowires were selectively grown on partially masked GaAs (111)B substrates; then AlGaAs was grown to form freestanding heterostructured nanowires. Investigation of nanowire...

  • Gallium-driven assembly of gold nanowire networks. Yazdanpanah, Mehdi M.; Harfenist, Steven A.; Cohn, Robert W. // Applied Physics Letters;8/30/2004, Vol. 85 Issue 9, p1592 

    Nanowire networks of Au–Ga alloy are fabricated at temperatures between 220 and 300°C by application of small drops of liquid gallium to 10- to 100-nm-thick gold films. As the liquid gallium drop spreads and reacts with the gold film, lamellar segregation of gold-rich and gallium-rich...

  • Observation of plastic deformation in freestanding single crystal Au nanowires. Lee, Dongyun; Zhao, Manhong; Wei, Xiaoding; Chen, Xi; Jun, Seong C.; Hone, James; Herbert, Erik G.; Oliver, Warren C.; Kysar, Jeffrey W. // Applied Physics Letters;9/11/2006, Vol. 89 Issue 11, p111916 

    Freestanding single crystal nanowires of gold were fabricated from a single grain of pure gold leaf by standard lithographic techniques, with center section of 7 μm in length, 250 nm in width, and 100 nm in thickness. The ends remained anchored to a silicon substrate. The specimens were...

  • Dependence on diameter and growth direction of apparent strain to failure of Si nanowires. Steighner, M. S.; Snedeker, L. P.; Boyce, B. L.; Gall, K.; Miller, D. C.; Muhlstein, C. L. // Journal of Applied Physics;Feb2011, Vol. 109 Issue 3, p033503 

    Previous studies of the mechanical properties of Si nanowires have not shown the size-dependent strengths that are expected for this prototypical brittle material. A potential source of the ambiguity in the literature is the development of tensile stresses during the large (nonlinear)...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics