Organic vertical-channel transistors structured using excimer laser

Parashkov, R.; Becker, E.; Ginev, G.; Riedl, T.; Brandes, M.; Johannes, H.-H.; Kowalsky, W.
December 2004
Applied Physics Letters;12/6/2004, Vol. 85 Issue 23, p5751
Academic Journal
Low-cost, large-area patterning of organic field-effect transistors with high-resolution is a subject of ongoing investigations. Here, we present a concept of patterning vertical-channels organic transistors using excimer laser. The channel length is controlled by the thickness of the dielectric polymer layer between the drain and source electrodes. We demonstrate that, by using this method, patterning of transistors with either metal or polymer contacts with resolutions as high as 2 μm is possible. Experimental data of vertical-channel pentacene transistors with either gold or poly (3,4-ethylenedioxythiophene) as drain-source contacts are reported. Field effect mobilities of 1×10-3 and 3×10-4 cm2/V s, respectively, have been measured in these devices.


Related Articles

  • High-mobility pentacene organic field-effect transistors with a high-dielectric-constant fluorinated polymer film gate dielectric. Stadlober, Barbara; Zirkl, Martin; Beutl, Michael; Leising, Günther; Bauer-Gogonea, Simona; Bauer, Siegfried // Applied Physics Letters;6/13/2005, Vol. 86 Issue 24, p242902 

    High-performance pentacene organic thin-film transistors with double layers of the terpolymer electret poly(vinylidene fluoride/tetrafluoroethylene/hexafluoropropylene) and the polymer poly(vinyl cinnamate) as a gate dielectric are reported. The electret is a high-k dielectric polymer with a...

  • High-mobility bottom-contact n-channel organic transistors and their use in complementary ring oscillators. Byungwook Yoo; Taeho Jung; Basu, Debarshi; Dodabalapur, Ananth; Jones, Brooks A.; Facchetti, Antonio; Wasielewski, Michael R.; Marks, Tobin J. // Applied Physics Letters;2/20/2006, Vol. 88 Issue 8, p082104 

    The electrical characteristics of bottom-contact organic field-effect transistors fabricated with the air-stable n-type semiconductor N,N′-bis(n-octyl)-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI-8CN2) are described. The mobility, threshold voltage, subthreshold swing, and Ion/Ioff...

  • Effect of the hydrophobicity and thickness of polymer gate dielectrics on the hysteresis behavior of pentacene-based field-effect transistors. Kim, Se Hyun; Nam, Sooji; Jang, Jaeyoung; Hong, Kipyo; Yang, Chanwoo; Chung, Dae Sung; Park, Chan Eon; Choi, Woon-Seop // Journal of Applied Physics;May2009, Vol. 105 Issue 10, p104509 

    We demonstrate the origin and mechanism of the hysteresis behavior that is frequently observed during the operation of organic field-effect transistors (OFETs) based on polymer gate dielectrics. Although polar functionalities, such as hydroxyl groups, present in the polymer gate dielectrics are...

  • Ambipolar organic field-effect transistors on unconventional substrates. Cosseddu, P.; Mattana, G.; Orgiu, E.; Bonfiglio, A. // Applied Physics A: Materials Science & Processing;Apr2009, Vol. 95 Issue 1, p49 

    In this paper we report on the realization of flexible all-organic ambipolar field-effect transistors (FETs) realized on unconventional substrates, such as plastic films and textile yarns. A double layer pentacene-C60 heterojunction was used as the semiconductor layer. The contacts were made...

  • High mobility of pentacene field-effect transistors with polyimide gate dielectric layers. Kato, Yusaku; Shingo Iba; Teramoto, Ryohei; Sekitano, Tsuyoshi; Someya, Takao; Kawaguchi, Hiroshi; Sakurai, Takayasu // Applied Physics Letters;5/10/2004, Vol. 84 Issue 19, p3789 

    Polyimide gate dielectric layers cured at 180 °C have been employed to fabricate high-quality pentacene field-effect transistors on polyethylenenaphthalate-based films. The surface roughness (root-mean square) of gate dielectric layers characterized by atomic force microscopy is only 0.2 nm,...

  • Gate bias stress in pentacene field-effect-transistors: Charge trapping in the dielectric or semiconductor. Häusermann, R.; Batlogg, B. // Applied Physics Letters;8/22/2011, Vol. 99 Issue 8, p083303 

    Gate bias stress instability in organic field-effect transistors (OFETs) is a major conceptual and device issue. This effect manifests itself by an undesirable shift of the transfer characteristics and is associated with long term charge trapping. We study the role of the dielectric and the...

  • Influence of the polymer dielectric characteristics on the performance of a quaterthiophene organic field-effect transistor. Unni, K.; Dabos-Seignon, Sylvie; Nunzi, Jean-Michel // Journal of Materials Science;Mar2006, Vol. 41 Issue 6, p1865 

    Organic field-effect transistors were fabricated with quaterthiophene as the active material and various polymeric dielectrics as the gate insulator. The conduction parameters such as mobility, threshold voltage, subthreshold swing, the maximum density of surface states etc. were found out. The...

  • Low-voltage pentacene field-effect transistors with ultrathin polymer gate dielectrics. Sang Yoon Yang; Se Hyun Kim; Kwonwoo Shin; Hayoung Jeon; Chan Eon Park // Applied Physics Letters;4/24/2006, Vol. 88 Issue 17, p173507 

    Organic field-effect transistors (OFETs) for low-voltage operation have been realized with conventional polymer gate dielectrics such as polyimides and cross-linked poly-4-vinyl phenols (PVPs) by fabricating ultrathin films. These ultrathin polymers (thickness ∼10 nm) have shown good...

  • Low-voltage operation of a pentacene field-effect transistor with a polymer electrolyte gate dielectric. Panzer, Matthew J.; Newman, Christopher R.; Frisbie, C. Daniel // Applied Physics Letters;3/7/2005, Vol. 86 Issue 10, p103503 

    Large operating voltages are often required to switch organic field-effect transistors (OFETs) on and off because commonly used gate dielectric layers provide low capacitive coupling between the gate electrode and the semiconductor. We present here a pentacene OFET gated by a solution-deposited...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics