TITLE

Luminescence and lasing in InGaN/GaN multiple quantum well heterostructures grown at different temperatures

AUTHOR(S)
Yablonskii, G. P.; Pavlovskii, V. N.; Lutsenko, E. V.; Zubialevich, V. Z.; Gurskii, A. L.; Kalisch, H.; Szymakowski, A.; Jansen, R. H.; Alam, A.; Schineller, B.; Heuken, M.
PUB. DATE
November 2004
SOURCE
Applied Physics Letters;11/29/2004, Vol. 85 Issue 22, p5158
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
It was found that the decrease of the InGaN/GaN multiple quantum well (MQW) growth temperature from 865 to 810 °C leads to a MQW emission wavelength shift from the violet to the green spectral region. The lowering of the growth temperature also promotes a decrease of the MQW photoluminescence (PL) intensity at high excitation and a disappearance of the excitonic features from the low-temperature reflection and PL spectra of GaN barriers and claddings. The laser threshold dependence on Tg is not monotonic, with the lowest value of 270 kW/cm2 at Tg=830 °C. High-temperature annealing (900 °C, 30 min) leads to a twofold increase of the PL efficiency only from the InGaN QWs grown at the lowest temperature. The results allow one to explain the laser threshold behavior in terms of the heterostructure quality, the defect concentration, In clusterization, and the piezoelectric field dependence on the MQW growth temperature.
ACCESSION #
15244186

 

Related Articles

  • Terahertz Luminescence of GaAs-Based Heterostructures with Quantum Wells under the Optical Excitation of Donors. Bekin, N. A.; Zhukavin, R. Kh.; Kovalevskii, K. A.; Pavlov, S. G.; Zvonkov, B. N.; Uskova, E. A.; Shastin, V. N. // Semiconductors;Jan2005, Vol. 39 Issue 1, p67 

    Spontaneous emission from selectively doped GaAs/InGaAs:Si and GaAs/InGaAsP:Si heterostructures is studied in the frequency range of ∼3-3.5 THz for transitions between the states of the two-dimensional subband and donor center (Si) under the condition of excitation with a CO2 laser at...

  • Well width dependence of disorder effects on the optical properties of AlGaN/GaN quantum wells. Friel, I.; Thomidis, C.; Moustakas, T. D. // Applied Physics Letters;10/11/2004, Vol. 85 Issue 15, p3068 

    We report on a temperature-dependent photoluminescence study of disorder effects on the optical properties of Al0.2Ga0.8N/GaN multiple quantum wells as a function of the well width. It is found that the disorder-induced inhomogeneous broadening of the excitonic density of states increases with...

  • Cation intermixing at quantum well/barriers interfaces in aged AlGaAs-based high-power laser diodes bars. Pommiès, M.; Avella, M.; Cánovas, E.; Jiménez, J.; Fillardet, T.; Oudart, M.; Nagle, J. // Applied Physics Letters;3/28/2005, Vol. 86 Issue 13, p131103 

    We report an analysis of quantum well (QW) degradation in high-power AlGaAs-based laser bars emitting at 808 nm. Using low-temperature spectrally resolved cathodoluminescence (LT-SRCL) we evidenced a redshift of the AlGaAs QW luminescence peak in the less degraded regions and a blueshift in the...

  • Deep ultraviolet emitting AlGaN quantum wells with high internal quantum efficiency. Bhattacharyya, A.; Moustakas, T. D.; Lin Zhou; Smith, David. J.; Hug, W. // Applied Physics Letters;5/4/2009, Vol. 94 Issue 18, p181907 

    We report the development of Al0.7Ga0.3N/AlN quantum wells with high internal quantum efficiency. All samples had identical well and barrier thickness but the III/V flux ratio was varied during growth by increasing the Ga flux. The luminescence spectra show single peaks which vary from 220 nm...

  • ARKEOLOJÄ°K ÖRNEKLERÄ°N Ä°NFRARED UYARMALI LÃœMÄ°NESANS KULLANILARAK EÅžDEÄžER DOZ TAYÄ°NÄ°. Tanir, Güneş; Akti, Nisa Nur; Bölükdemır, M. Hicabi; Tel, Eyüp // Anadolu University Journal of Sciences & Technology;2007, Vol. 8 Issue 1, p263 

    In this study, equivalent dose of archaeological sample which was taken from Büyükardıç (Erzincan,Turkey) was obtained as experimental using infrared stimulated luminescence (IRSL) technique. Equivalent dose (paleo-dose) is the important rank of luminescence dating. Both single- and...

  • Luminescence and electrical properties of InGaN/AlGaN/GaN light emitting diodes with multiple quantum wells. Kudryashov, V. E.; Turkin, A. N.; Yunovich, A. �.; Kovalev, A. N.; Manyakhin, F. I. // Semiconductors;Apr99, Vol. 33 Issue 4, p429 

    Luminescence spectra of light-emitting diodes based on InGaN/AlGaN/GaN heterostructures with multiple quantum wells are studied for currents in the range J = 0.15 �A-150 mA. The comparatively high quantum efficiency for low J (J[sub max] = 0.5-1 mA) is a consequence of a low probability for...

  • Luminescence investigations of the degradation of 2-methylphenol and 4-methylphenol in water. Tchaikovskaya, O. N.; Karetnikova, E. A.; Sokolova, I. V.; Sokolova, T. V.; Fedorova, E. S.; Kudryasheva, N. S. // Russian Physics Journal;Dec2008, Vol. 51 Issue 12, p1344 

    Fluorescent characteristics of the photo- and biotransformations of 2-methylphenol, 4-methylphenol and their mixtures in water exposed to uv radiation of various sources and to Penicillium tardum H-2 culture have been studied. The toxicity of these solutions has also been investigated by means...

  • Recombination luminescence of poly(arylene phthalide) films induced by visible light. Antipin, V. A.; Mamykin, D. A.; Kazakov, V. P. // High Energy Chemistry;Jul2011, Vol. 45 Issue 4, p320 

    Long-term afterglow emission (AG) of poly(arylene phthalide) films (PAP) irradiated with visible light has been discovered. Recombination nature of the AG was experimentally proven as in the case of UV irradiation. Features of the observed AG spectra were analyzed in comparison with the photo-,...

  • Determining the onset of mechanical failure of silver azide crystals initiated by a laser pulse. Kriger, V. G.; Kalenskii, A. V.; Zvekov, A. A. // Combustion, Explosion, & Shock Waves;Jan2010, Vol. 46 Issue 1, p60 

    The onset of mechanical failure of a silver azide single crystal initiated by a laser pulse was determined experimentally. Three independent techniques were employed: comparative measurement of the explosive luminescence signal detected from the entire volume of the experimental cell and from...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics