Luminescence and lasing in InGaN/GaN multiple quantum well heterostructures grown at different temperatures

Yablonskii, G. P.; Pavlovskii, V. N.; Lutsenko, E. V.; Zubialevich, V. Z.; Gurskii, A. L.; Kalisch, H.; Szymakowski, A.; Jansen, R. H.; Alam, A.; Schineller, B.; Heuken, M.
November 2004
Applied Physics Letters;11/29/2004, Vol. 85 Issue 22, p5158
Academic Journal
It was found that the decrease of the InGaN/GaN multiple quantum well (MQW) growth temperature from 865 to 810 °C leads to a MQW emission wavelength shift from the violet to the green spectral region. The lowering of the growth temperature also promotes a decrease of the MQW photoluminescence (PL) intensity at high excitation and a disappearance of the excitonic features from the low-temperature reflection and PL spectra of GaN barriers and claddings. The laser threshold dependence on Tg is not monotonic, with the lowest value of 270 kW/cm2 at Tg=830 °C. High-temperature annealing (900 °C, 30 min) leads to a twofold increase of the PL efficiency only from the InGaN QWs grown at the lowest temperature. The results allow one to explain the laser threshold behavior in terms of the heterostructure quality, the defect concentration, In clusterization, and the piezoelectric field dependence on the MQW growth temperature.


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