Free-standing, optically pumped, GaN/InGaN microdisk lasers fabricated by photoelectrochemical etching

Haberer, E. D.; Sharma, R.; Meier, C.; Stonas, A. R.; Nakamura, S.; DenBaars, S. P.; Hu, E. L.
November 2004
Applied Physics Letters;11/29/2004, Vol. 85 Issue 22, p5179
Academic Journal
GaN-based, mushroom-shaped microdisk lasers were fabricated using band-gap selective photoelectrochemical etching. The optically pumped microdisks had well-defined, distinct modes at excitation powers ranging from about 8 to 16 W/cm2. Modal linewidths of 0.09 nm were reported, which was near the resolution of the measurement equipment. Quality factors for the microdisks were >4600. The observed lasing threshold was 12.1 W/cm2. At higher excitation powers, heating effects and degradation were observed in the optical response of the microdisks.


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