Free carrier absorption in Be-doped epitaxial AlGaAs thin films

Rinzan, M. B. M.; Esaev, D. G.; Perera, A. G. U.; Matsik, S. G.; Von Winckel, G.; Stintz, A.; Krishna, S.
November 2004
Applied Physics Letters;11/29/2004, Vol. 85 Issue 22, p5236
Academic Journal
Free hole absorption in doped AlxGa1-xAs films, grown by molecular-beam epitaxy on semi-insulating GaAs substrates, was investigated. Free carrier absorption for three different hole concentrations with the same Al fraction and for two different Al fractions with the same doping concentration was studied. Experimental absorption coefficients were obtained from the data using a model that includes multiple reflections in the substrate wafer. In the 100–400 μm range, (3,5,8)×1018 cm-3 Be-doped Al0.01Ga0.99As films have absorption coefficients of ∼(3,3.5,5)×103 cm-1, respectively, where the magnitude of the absorption is found to be almost independent of the wavelength. This allows replacing doped GaAs emitters in heterojunction interfacial work function internal photoemission far-infrared (HEIWIP) detectors with p-AlxGa1-xAs layers with x<0.017 facilitating the extension of the threshold wavelength of HEIWIP detectors beyond the 92 μm limit due to the practical Al fraction growth limit of 0.005 in molecular-beam epitaxy.


Related Articles

  • Optical monitoring of the growth of heavily doped GaAs by chemical beam epitaxy and of the in.... Joyce, T.B.; Bullough, T.J. // Applied Physics Letters;10/24/1994, Vol. 65 Issue 17, p2193 

    Details the in situ optical monitoring of the growth of heavily doped gallium arsenide by chemical beam epitaxy. Use of dynamic optical reflectivity to monitor normal incidence reflectance of a 670 nm semiconductor laser; Observation of oscillations in the reflectance of the growing film;...

  • Study of ErAs/GaAs strained-layer structures using optical absorption and ion channeling. Ralston, J. D.; Fuchs, F.; Schneider, J.; Schmälzlin, J. // Journal of Applied Physics;9/1/1990, Vol. 68 Issue 5, p2176 

    Observes the crystal-field splittings in the erbium-related layer absorption spectra of erbium-arsenic films grown on gallium arsenide by molecular beam epitaxy. Details on the experiment; Results of the study; Conclusions.

  • Positive and negative ‘‘resistless’’ lithography of GaAs by electron beam exposure and thermal Cl2 etching. Clausen, E. M.; Harbison, J. P.; Chang, C. C.; Lin, P. S. D.; Craighead, H. G.; Florez, L. T. // Applied Physics Letters;9/3/1990, Vol. 57 Issue 10, p1043 

    Positive and negative lithographic patterns have been produced in epitaxial layers of GaAs, achieved by electron beam writing and subsequent etching by Cl2 gas at elevated temperatures. A latent image is formed in the native oxide which is either less resistant to thermal Cl2 etching (positive...

  • Epitaxial growth of GaAs by solid-phase transport. Chen, J.S.; Kolawa, E.; Garland, C.M.; Nicolet, M.-A. // Applied Physics Letters;9/23/1991, Vol. 59 Issue 13, p1597 

    Examines the epitaxial growth of gallium arsenide films by solid-phase transport. Annealing of substrates with silver film at 550 degree Celsius; Cap layer used to minimize arsenic loss; Use of cross-sectional transmission electron microscopy.

  • Assessment of GaAs heteroepitaxial films grown on silicon-on-sapphire upgraded by double solid phase epitaxy. Posthill, J. B.; Markunas, R. J.; Humphreys, T. P.; Nemanich, R. J.; Das, K.; Parikh, N. R.; Ross, P. L.; Miner, C. J. // Applied Physics Letters;10/23/1989, Vol. 55 Issue 17, p1756 

    Characterization of heteroepitaxial GaAs grown on silicon-on-sapphire that had been microstructurally upgraded by the double solid phase epitaxy process reveals that microtwining and surface roughness are substantially reduced. Moreover, the thermally induced elastic strain in the GaAs film is...

  • Study of relaxed InxGa1-xAs epilayers on GaAs by grazing incidence x-ray diffraction. Imperatori, P.; Lamelas, F. J.; Fuoss, P. H. // Journal of Applied Physics;11/15/1996, Vol. 80 Issue 10, p5723 

    Presents a study which investigated partially-relaxed In[subx]Ga[sub1] - [subx]As epilayers on gallium arsenide substrates. Experimental procedures; Analysis of the distribution of strain relaxation; Application of grazing incidence x-ray diffraction in the strain relaxation of epitaxial films.

  • Radiative recombination in surface-free n+/n-/n+GaAs homostructures. Smith, L. M.; Wolford, D. J.; Venkatasubramanian, R.; Ghandhi, S. K. // Applied Physics Letters;10/8/1990, Vol. 57 Issue 15, p1572 

    We show that the radiative efficiencies and lifetimes of photoexcited carriers in epitaxial GaAs may both be enhanced by three to four orders of magnitude by the preparation of thin n+, doped layers at the surface and substrate interfaces. Samples were prepared by organometallic vapor phase...

  • Low-temperature epitaxial growth of GaAs on on-axis (100) Si using ionized source beam epitaxy. Yun, S. J.; Yoo, M. C.; Kim, K. // Journal of Applied Physics;8/15/1993, Vol. 74 Issue 4, p2866 

    Examines the epitaxial growth of gallium arsenide films on on-axis (100) silicon at growth temperatures using ionized source beam epitaxy. Experiment; Results and discussion.

  • Microstructure evolution of GaSe thin films grown on GaAs(100) by molecular beam epitaxy. Dai, Z. R.; Chegwidden, S. R. // Journal of Applied Physics;3/1/1999, Vol. 85 Issue 5, p2603 

    Presents information on a study which deals with the structural and interface characterization of GaSe thin films grown over a gallium arsenide(100) substrate by molecular beam epitaxy. Experimental details; Results and discussion; Conclusions.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics