Characterization of quantum wells by cross-sectional Kelvin probe force microscopy

Douhéret, O.; Anand, S.; Glatzel, Th.; Maknys, K.; Sadewasser, S.
November 2004
Applied Physics Letters;11/29/2004, Vol. 85 Issue 22, p5245
Academic Journal
Cross-sectional Kelvin probe force microscopy (KPFM) in ultrahigh vacuum is used to characterize the electronic structure of InGaAs/InP quantum wells. The KPFM signal shows clear peaks at the position of the quantum wells and exhibits a systematic trend for different wells. It is demonstrated that KPFM is capable of detecting quantum wells as narrow as 5 nm. Evidence for carrier accumulation in the quantum wells is observed. A complete quantitative analysis of the quantum well properties is shown to be impeded by tip averaging effects and due to surface/interface states.


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