TITLE

As-doped p-type ZnO produced by an evaporation/sputtering process

AUTHOR(S)
Look, D. C.; Renlund, G. M.; Burgener, R. H.; Sizelove, J. R.
PUB. DATE
November 2004
SOURCE
Applied Physics Letters;11/29/2004, Vol. 85 Issue 22, p5269
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Strongly p-type ZnO is produced by the following sequence of steps: (1) evaporation of Zn3As2 on a fused-quartz substrate at 350 °C; and (2) sputtering of ZnO with substrate held at 450 °C. The electrical characteristics include: resistivity of 0.4 Ω cm, a mobility of 4 cm2/V s, and a hole concentration of about 4×1018 cm-3. This resistivity is among the best (lowest) ever reported for p-type ZnO. Secondary-ion mass spectroscopic analysis gives an average As concentration about 5×1019 cm-3, and a simple one-band fit of the temperature-dependent mobility curve yields an acceptor concentration of about 9×1019 cm-3. This is strong evidence that the p-type dopant involves As, although it is not clear whether the acceptor is simply AsO or the recently suggested AsZn-2VZn.
ACCESSION #
15244149

 

Related Articles

  • Dielectric SiO2/ZrO2 distributed Bragg reflectors for ZnO microcavities prepared by the reactive helicon-wave-excited-plasma sputtering method. Chichibu, S. F.; Ohmori, T.; Shibata, N.; Koyama, T. // Applied Physics Letters;4/17/2006, Vol. 88 Issue 16, p161914 

    Reactive helicon-wave-excited-plasma sputtering method is shown to be a suitable technique for the fabrication of high reflectivity (R) distributed Bragg reflectors (DBRs), in particular, operating at the resonance wavelength of B excitons in ZnO (366.5 nm), utilizing quarter-wavelength...

  • Hydrogen-doped high conductivity ZnO films deposited by radio-frequency magnetron sputtering. Liang-Yih Chen; Wen-Hwa Chen; Jia-Jun Wang; Franklin Chau-Nan Hong; Yan-Kuin Su // Applied Physics Letters;12/6/2004, Vol. 85 Issue 23, p5628 

    Hydrogen-doped zinc oxide (ZnO:H) films were deposited by rf magnetron sputtering as transparent conductive films. The resistivity of ZnO:H film was significantly reduced by the addition of H2 in Ar during rf sputtering. The electrical resistivity of ZnO:H films reached 2×10-4 Ω cm. The...

  • Stress evolution during growth in direct-current-sputtered zinc oxide films at various oxygen flows. Drese, Robert J.; Wuttig, Matthias // Journal of Applied Physics;10/1/2005, Vol. 98 Issue 7, p073514 

    The evolution of stress during the growth of zinc and zinc oxide films deposited from a metallic target using direct-current magnetron sputtering has been analyzed in situ. For this purpose a two-beam wafer curvature setup attached to the sputter chamber was employed. The oxygen flow during the...

  • Arsenic doped p-type zinc oxide films grown by radio frequency magnetron sputtering. Fan, J. C.; Zhu, C. Y.; Fung, S.; Zhong, Y. C.; Wong, K. S.; Xie, Z.; Brauer, G.; Anwand, W.; Skorupa, W.; To, C. K.; Yang, B.; Beling, C. D.; Ling, C. C. // Journal of Applied Physics;Oct2009, Vol. 106 Issue 7, p073709 

    As-doped ZnO films were grown by the radio frequency magnetron sputtering method. As the substrate temperature during growth was raised above ∼400 °C, the films changed from n type to p type. Hole concentration and mobility of ∼6×1017 cm-3 and ∼6 cm2 V-1 s-1 were achieved....

  • Arc Discharge Sputtering of Schungites. Aleshina, L. A.; Podgornyi, V. I.; Stefanovich, G. B.; Fofanov, A. D. // Technical Physics;Sep2004, Vol. 49 Issue 9, p1146 

    The schungite structure is shown to be modified in an arc discharge in an inert gas atmosphere. As a result of the direct effect of the arc discharge, some portion of the schungite material transforms locally into rhombohedral graphite. The spectral dependence of the optical transmission of the...

  • Chemical sputtering of carbon by nitrogen ions. Jacob, W.; Hopf, C.; Schlüter, M. // Applied Physics Letters;5/16/2005, Vol. 86 Issue 20, p204103 

    Chemical sputtering of amorphous hydrogenated carbon layers by nitrogen molecular ions was studied as a function of the ion energy in the range from 30 to 900 eV. The sputtering yield shows only a very weak variation with energy in the range from 900 down to 50 eV. For lower energies it...

  • Effect of a thermal factor on the concentration-structure ordering in ion-plasma W-Ti-B condensates. Shpak, A.; Sobol’, O.; Kunitskaya, L.; Barabash, M.; Kunitskii, Yu.; Khomenko, L. // Technical Physics;Aug2010, Vol. 55 Issue 8, p1150 

    Small-angle X-ray scattering is used to study the effect of deposition and annealing conditions on the concentration-structure ordering in ion-plasma W-Ti-B condensates. At a relatively low condensation temperature of a solid solution (up to Tc = 770 K), the formed modulated structure has a...

  • Room temperature growth of high quality ZnO thin film on sapphire substrates. Nam Ho Kim; Hyoun Woo Kim // Journal of Materials Science;May2004, Vol. 39 Issue 9, p3235 

    Discusses the room temperature growth of zinc oxide thin film on sapphire substrates. Versatility due to structural, electrical, and optical properties; Radio frequency magnetron sputtering system; Collision of metal atoms and reactive gas molecules on the substrate; X-ray diffraction patterns;...

  • Observation of self-sputtering in energetic condensation of metal ions. Anders, André // Applied Physics Letters;12/20/2004, Vol. 85 Issue 25, p6137 

    The condensation of energetic metal ions on a surface may cause self-sputtering even in the absence of substrate bias. Charge-state-averaged self-sputtering yields were determined for both zirconium and gold ions generated by a cathodic vacuum arc. Films were deposited on differently biased...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics