As-doped p-type ZnO produced by an evaporation/sputtering process

Look, D. C.; Renlund, G. M.; Burgener, R. H.; Sizelove, J. R.
November 2004
Applied Physics Letters;11/29/2004, Vol. 85 Issue 22, p5269
Academic Journal
Strongly p-type ZnO is produced by the following sequence of steps: (1) evaporation of Zn3As2 on a fused-quartz substrate at 350 °C; and (2) sputtering of ZnO with substrate held at 450 °C. The electrical characteristics include: resistivity of 0.4 Ω cm, a mobility of 4 cm2/V s, and a hole concentration of about 4×1018 cm-3. This resistivity is among the best (lowest) ever reported for p-type ZnO. Secondary-ion mass spectroscopic analysis gives an average As concentration about 5×1019 cm-3, and a simple one-band fit of the temperature-dependent mobility curve yields an acceptor concentration of about 9×1019 cm-3. This is strong evidence that the p-type dopant involves As, although it is not clear whether the acceptor is simply AsO or the recently suggested AsZn-2VZn.


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