TITLE

Highly a-axis-oriented Nb-doped Pb(TixZr1-x)O3 thin films grown by sol–gel technique for uncooled infrared dectors

AUTHOR(S)
Hui Han; Xiuyu Song; Jian Zhong; Kotru, Sushma; Padmini, P.; Pandey, R. K.
PUB. DATE
November 2004
SOURCE
Applied Physics Letters;11/29/2004, Vol. 85 Issue 22, p5310
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Pb(Nb0.02Zr0.2Ti0.8)O3 thin films with thickness of 900 nm were spincoated on platinized silicon substrate using the sol–gel method. X-ray diffraction and field emission scanning electron microscopy show that the films are highly a-axis-oriented with columnar structure. A large remnant polarization (Pr+) ∼92.2 μC/cm-2 was observed for as-grown films. The coercive field (Ec+) for these films was 159.3 kV/cm. Good pyroelectric properties are obtained as a result of large remnant and spontaneous polarization and their strong temperature dependence. The pyroelectric coefficient and figure of merit at room temperature (22 °C) are 10.8×10-4 C m-2 K-1 and 2.34×10-5 Pa-1/2, respectively.
ACCESSION #
15244135

 

Related Articles

  • Structural and optical properties of 6,13-pentacenequinone thin films. Hwang, D. K.; Kibum Kim; Jae Hoon Kim; Seongil Im; Duk-Young Jung; Eugene Kim // Applied Physics Letters;12/6/2004, Vol. 85 Issue 23, p5568 

    We report on the structural and optical properties of 6,13-pentacenequinone thin films deposited on n-Si substrates by thermal evaporation at room temperature. X-ray diffraction data indicate excellent crystallinity but the films have two crystalline phases mixed. Photoluminescence (PL) spectra...

  • Pseudo-epitaxial lead zirconate titanate thin film on silicon substrate with enhanced ferroelectric polarization. Wei Chuan Goh; Kui Yao; Ong, C. K. // Applied Physics Letters;8/15/2005, Vol. 87 Issue 7, p072906 

    A pseudo-epitaxial Pb(Zr0.52Ti0.48)O3 (PZT) thin film was fabricated on a silicon substrate using a La0.7Sr0.3MnO3/YBa2Cu3O7-δ/yttria-stabilized zirconia heterostructure template by a pulsed-laser deposition process. The pseudo-epitaxial PZT thin film was characterized with broad x-ray...

  • Imaging defects in strained-silicon thin films by glancing-incidence x-ray topography. Black, D. R.; Woicik, J. C.; Erdtmann, M.; Langdo, T. A. // Applied Physics Letters;5/29/2006, Vol. 88 Issue 22, p224102 

    X-ray topographical images from thin (<=50 nm) strained-Si films grown on relaxed, planarized crystalline SiGe-on-Si (001) virtual substrates have been imaged by glancing-incidence monochromatic x-ray topography. This extremely asymmetric diffraction geometry, utilizing (311) diffraction planes,...

  • Growth of partially strain-relaxed Si[sub 1-y] C[sub y] epilayers on (100)Si. Senz, S.; Plössl, A.; Gösele, U.; Zerlauth, S.; Stangl, J.; Bauer, G. // Applied Physics A: Materials Science & Processing;1998, Vol. 67 Issue 2, p147 

    Abstract. Thin Si[sub l-y]C[sub y] epilayers were grown by MBE on (100) Si single-crystal substrates either directly on a dislocation-free or on a highly dislocated Si buffer layer. The orientation of the epilayers and their strain status were measured by double-crystal X-ray diffraction. Cross...

  • Capacitance–voltage characteristics of NaNbO[sub 3] thin films. Lingwar, Vijendra; Panwar, N. S. // Journal of Applied Physics;10/1/2003, Vol. 94 Issue 7, p4571 

    By radio-frequency magnetron sputtering of bulk NaNbO[sub 3] pellet targets, films of NaNbO[sub 3] have been deposited on silicon substrates at different temperatures. Room-temperature deposited films have been annealed at different temperatures. Film samples have been characterized using an...

  • Low-temperature reaction of thin-film platinum (≤300 Ã…) with (100) silicon. Tsui, Bing-Yue; Chen, Mao-Chieh // Journal of Applied Physics;12/15/1990, Vol. 68 Issue 12, p6246 

    Presents a study that investigated low-termperature reaction of thin-film platinum with silicon. Sheet resistance measurement of silicide formation sequence; Use nitrogen furnace; X-ray diffraction analysis.

  • Synthesis of epitaxial β-SiC by C60 carbonization of silicon. Henke, S.; Stritzker, B.; Rauschenbach, B. // Journal of Applied Physics;8/1/1995, Vol. 78 Issue 3, p2070 

    Proposes a one-step procedure deposition technique to produce high quality silicon carbide (SiC) films by carbon deposition on silicon by only one step. Application of Rutherford backscattering and x-ray diffraction; Distribution of crystal orientations in the polycrystalline SiC layers;...

  • Mechanical stress in gallium-arsenide on silicon substrates. Budnick, B.; Wilke, K.; Heymann, G. // Journal of Applied Physics;8/1/1994, Vol. 76 Issue 3, p1989 

    Presents information on a study which investigated the mechanical stress of thin gallium arsenide layers on silicon by photo- and cathodoluminescence and x-ray diffraction. Analysis of the thickness of gallium arsenide layers; Methodology of the study; Results and discussion.

  • A study of strain in thin epitaxial films of yttrium silicide on Si(111). Siegal, Michelle F.; Martínez-Miranda, L. J.; Santiago-Avilés, J. J.; Graham, W. R.; Siegal, M. P. // Journal of Applied Physics;2/1/1994, Vol. 75 Issue 3, p1517 

    Presents a study that discussed the results of an x-ray diffraction analysis of epitaxial yttrium silicide films grown on silicon(111). Details of the experiment; Results; Discussion.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics