Highly a-axis-oriented Nb-doped Pb(TixZr1-x)O3 thin films grown by sol–gel technique for uncooled infrared dectors

Hui Han; Xiuyu Song; Jian Zhong; Kotru, Sushma; Padmini, P.; Pandey, R. K.
November 2004
Applied Physics Letters;11/29/2004, Vol. 85 Issue 22, p5310
Academic Journal
Pb(Nb0.02Zr0.2Ti0.8)O3 thin films with thickness of 900 nm were spincoated on platinized silicon substrate using the sol–gel method. X-ray diffraction and field emission scanning electron microscopy show that the films are highly a-axis-oriented with columnar structure. A large remnant polarization (Pr+) ∼92.2 μC/cm-2 was observed for as-grown films. The coercive field (Ec+) for these films was 159.3 kV/cm. Good pyroelectric properties are obtained as a result of large remnant and spontaneous polarization and their strong temperature dependence. The pyroelectric coefficient and figure of merit at room temperature (22 °C) are 10.8×10-4 C m-2 K-1 and 2.34×10-5 Pa-1/2, respectively.


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