Energy-band diagram of metal/Lu2O3/silicon structures

Seguini, G.; Bonera, E.; Spiga, S.; Scarel, G.; Fanciulli, M.
November 2004
Applied Physics Letters;11/29/2004, Vol. 85 Issue 22, p5316
Academic Journal
Internal photoemission spectroscopy has been used to determine the band alignment in Lu2O3 based metal-oxide-semiconductor structures. The Si/Lu2O3 interface conduction- and valence-band offsets were determined to be 2.1±0.1 and 2.6±0.1 eV, respectively. The energy barrier for electrons at the Al/Lu2O3 interface is 2.4±0.1 eV. The value of the Lu2O3 transport band gap, obtained by photoconductivity measurements, was found to be 5.8±0.1 eV. Optical absorption spectroscopy gave a value of 4.89±0.02 eV for the Lu2O3 optical band gap.


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