TITLE

Fragmentation of nanowires driven by Rayleigh instability

AUTHOR(S)
Molares, M. E.Toimil; Balogh, A. G.; Cornelius, T. W.; Neumann, R.; Trautmann, C.
PUB. DATE
November 2004
SOURCE
Applied Physics Letters;11/29/2004, Vol. 85 Issue 22, p5337
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Rayleigh instability of copper nanowires has been experimentally demonstrated. After annealing 30–50-nm-diam wires at temperatures between 400 and 600 °C, different stages of the fragmentation process are observed by scanning electron microscopy. At 400 °C, the wires start to fragment, forming shorter sections at 500 °C, and finally decaying into a chain of nanospheres at 600 °C. Average diameter and spacing of the spheres are in agreement with theoretical predictions. The Rayleigh instability applied to nanowires provides a structuring technique producing long chains of nanospheres, which should find interesting applications, for instance, by guiding light below the diffraction limit via coherent coupling of surface-plasmon polaritons.
ACCESSION #
15244126

 

Related Articles

  • Effect of surface bonding on semiconductor nanoribbon wiggling structure. Yu Zhang; Minrui Yu; Savage, Donald E.; Lagally, Max G.; Blick, Robert H.; Feng Liu // Applied Physics Letters;3/15/2010, Vol. 96 Issue 11, p111904 

    SiGe nanomembranes and nanowires provide one important class of stretchable electronic materials. We have investigated a very interesting wiggling phenomenon of SiGe nanoribbons bonded to Si substrate as experimentally observed in a Hall-bar structure. Based on continuum linear stability...

  • Properties of B and P doped Ge nanowires. Peelaers, H.; Partoens, B.; Peeters, F. M. // Applied Physics Letters;6/25/2007, Vol. 90 Issue 26, p263103 

    An ab initio study of the formation and segregation energies of B and P doped Ge nanowires oriented along the [110] direction is performed for fully relaxed H-passivated nanowires. The authors found the preferential dopant positions and the associated formation energies. Edge positions are...

  • Preparation and photoinduced wettability conversion of superhydrophobic β-Ga2O3 nanowire film. Gao, L. Y.; Zheng, M. J.; Zhong, M.; Li, M.; Ma, L. // Applied Physics Letters;7/2/2007, Vol. 91 Issue 1, p013101 

    High-yield uniform β-Ga2O3 nanowire films with mesh structure on GaP substrate have been synthesized via heat treating porous GaP preevaporated Au under low vacuum. The single-crystalline β-Ga2O3 nanowires have uniform diameters of about 100 nm and a preferential [001] growth direction...

  • Templated Growth and Selective Functionalization of Magnetic Nanowires. van Belle, F.; Palfreyman, J. J.; Lew, W. S.; Mitrelias, T.; Bland, J. A. C. // AIP Conference Proceedings;8/1/2008, Vol. 1025 Issue 1, p34 

    Magnetic nanowires are considered as an alternative to magnetic or coloured beads for the labeling of biological entities. Single metal and multisegment magnetic nanowires of lengths between 5–20 μm have been grown, magnetically characterized and released, and selective...

  • Single-crystalline kinked semiconductor nanowire superstructures. Bozhi Tian; Ping Xie; Kempa, Thomas J.; Bell, David C.; Lieber, Charles M. // Nature Nanotechnology;Dec2009, Vol. 4 Issue 12, p824 

    The ability to control and modulate the composition, doping, crystal structure and morphology of semiconductor nanowires during the synthesis process has allowed researchers to explore various applications of nanowires. However, despite advances in nanowire synthesis, progress towards the ab...

  • Dipolar coupling in closely packed pseudo-spin-valve nanowire arrays. Goolaup, S.; Adeyeye, A. O.; Singh, N. // Journal of Applied Physics;12/1/2006, Vol. 100 Issue 11, p114301 

    A systematic study of the effects of lateral magnetostatic coupling of closely packed pseudo-spin-valve Ni80Fe20(10 nm)/Cu(tCu)/Ni80Fe20(80 nm) nanowire arrays with varied Cu film thicknesses is investigated. Nanowire arrays with a width of 185 nm and edge-to-edge spacings of 35 and 185 nm,...

  • Direct observation of changes to domain wall structures in magnetic nanowires of varying width. O'Shea, K. J.; McVitie, S.; Chapman, J. N.; Weaver, J. M. R. // Applied Physics Letters;11/17/2008, Vol. 93 Issue 20, p202505 

    Lorentz microscopy has been used to explore the structure variation of domain walls in thin Permalloy nanowires in the vicinity of symmetric triangular antinotches. The antinotches present a complex potential landscape to domain walls. Walls can be trapped in front of, partly enter, or be...

  • Proposed model for bistability in nanowire nonvolatile memory. Pokalyakin, V.; Tereshin, S.; Varfolomeev, A.; Zaretsky, D.; Baranov, A.; Banerjee, A.; Wang, Y.; Ramanathan, S.; Bandyopadhyay, S. // Journal of Applied Physics;6/15/2005, Vol. 97 Issue 12, p124306 

    Cadmium sulfide nanowires of 10-nm diameter, electrodeposited in porous anodic alumina films, exhibit an electronic bistability that can be harnessed for nonvolatile memory. The current–voltage characteristics of the wires show two stable conductance states that are well separated...

  • Morphology of germanium nanowires grown in presence of B2H6. Tutuc, E.; Guha, S.; Chu, J. O. // Applied Physics Letters;1/23/2006, Vol. 88 Issue 4, p043113 

    We study the Au-catalyzed chemical vapor growth of germanium (Ge) nanowires in the presence of di-borane (B2H6), serving as doping precursor. Our experiments reveal that, while undoped Ge nanowires can be grown epitaxially on Si(111) substrates with very long wire lengths, the B2H6 exposure...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics