Control of carbon nanotube morphology by change of applied bias field during growth

Chen, L.-H.; AuBuchon, J. F.; Gapin, A.; Daraio, C.; Bandaru, P.; Jin, S.; Kim, D. W.; Yoo, I. K.; Wang, C. M.
November 2004
Applied Physics Letters;11/29/2004, Vol. 85 Issue 22, p5373
Academic Journal
Carbon nanotube morphology has been engineered via simple control of applied voltage during dc plasma chemical vapor deposition growth. Below a critical applied voltage, a nanotube configuration of vertically aligned tubes with a constant diameter is obtained. Above the critical voltage, a nanocone-type configuration is obtained. The strongly field-dependent transition in morphology is attributed primarily to the plasma etching and decrease in the size of nanotube-nucleating catalyst particles. A two-step control of applied voltage allows a creation of dual-structured nanotube morphology consisting of a broad base nanocone (∼200 nm dia.) with a small diameter nanotube (∼7 nm) vertically emanating from the apex of the nanocone, which may be useful for atomic force microscopy.


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