TITLE

High-sheet-charge–carrier-density AlInN/GaN field-effect transistors on Si(111)

AUTHOR(S)
Dadgar, A.; Schulze, F.; Bläsing, J.; Diez, A.; Krost, A.; Neuburger, M.; Kohn, E.; Daumiller, I.; Kunze, M.
PUB. DATE
November 2004
SOURCE
Applied Physics Letters;11/29/2004, Vol. 85 Issue 22, p5400
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
AlInN/GaN heterostructures have been proposed to possess advantageous properties for field-effect transistors (FETs) over AlGaN/GaN [Kuzmík, IEEE Electron Device Lett. 22, 501 (2001); Yamaguchi et al., Phys. Status Solidi A 188, 895 (2001)]. A major advantage of such structures is that AlInN can be grown lattice-matched to GaN while still inducing high charge carrier densities at the heterointerface of around 2.7×1013 cm-3 by the differences in spontaneous polarization. Additionally, it offers a higher band offset to GaN than AlGaN. We grew AlInN FET structures on Si(111) substrates by metalorganic chemical vapor phase epitaxy with In concentrations ranging from 9.5% to 24%. Nearly lattice-matched structures show sheet carrier densities of 3.2×1013 cm-2 and mobilities of ∼406 cm2/V s. Such Al0.84In0.16N FETs have maximum dc currents of 1.33 A/mm for devices with 1 μm gate length.
ACCESSION #
15244105

 

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