TITLE

Nonvolatile organic field-effect transistor memory element with a polymeric gate electret

AUTHOR(S)
Singh, Th. B.; Marjanović, N.; Matt, G. J.; Sariciftci, N. S.; Schwödiauer, R.; Bauer, S.
PUB. DATE
November 2004
SOURCE
Applied Physics Letters;11/29/2004, Vol. 85 Issue 22, p5409
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Organic field-effect transistors with a polymeric electret as gate insulator and fullerenes as a molecular semiconductor were fabricated. We observed an amplification of the drain–source current Ids on the order of 104 upon applying a gate voltage Vg. Reversing the gate voltage Vg features large metastable hysteresis in the transfer characteristics Ids (Vg) with a long retention time. The observation of a switchable channel current Ids is proposed to originate from charge storage in the organic electret. As such, this device is a demonstration of an organic nonvolatile memory element switchable with the gate voltage.
ACCESSION #
15244102

 

Related Articles

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics