TITLE

Fabrication of a metal-oxide-semiconductor-type capacitive microtip array using SiO2 or HfO2 gate insulators

AUTHOR(S)
Kyung-Min Kim; Byung Joon Choi; Seong Keun Kim; Cheol Seong Hwang
PUB. DATE
November 2004
SOURCE
Applied Physics Letters;11/29/2004, Vol. 85 Issue 22, p5412
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Capacitive tip arrays having a metal-insulator-semiconductor capacitor structure were fabricated using thermally oxidized SiO2 or atomic-layer-deposited HfO2 gate dielectric films for their application to scanning-probe-array-type memory devices. The SiO2 film showed a nonuniform thickness distribution over the flat and tip areas of the arrays owing to the different oxidation speeds of the flat and tip Si surfaces. This resulted in a smaller sensing margin of the device. However, the high-dielectric HfO2 film showed not only a higher capacitance value but also a more uniform growth behavior over the whole area, which would result in a better device performance. The capacitance–voltage characteristics of both devices coincide well with the simulation results based on conventional metal-insulator-semiconductor theories.
ACCESSION #
15244101

 

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