Organic thin-film transistors having inorganic/organic double gate insulators

Wang, Jun; Xuanjun Yan; Yanxia Xu; Jian Zhang; Donghang Yan
November 2004
Applied Physics Letters;11/29/2004, Vol. 85 Issue 22, p5424
Academic Journal
Bottom-contact organic thin-film transistors (BC OTFTs) based on inorganic/organic double gate insulators were demonstrated. The double gate insulators consisted of tantalum pentoxide (Ta2O5) with high dielectric constant (κ) as the first gate insulator and octadecyltrichlorosilane (OTS) with low κ as the second gate insulator. The devices have carrier mobilities larger than 10-2 cm2/V s, on/off current ratio greater than 105, and the threshold voltage of -14 V, which is threefold larger field-effect mobility and an order of magnitude larger on/off current ratio than the OTFTs with a Ta2O5 gate insulator. The leakage current was decreased from 2.4×10-6 to 7.4×10-8 A due to the introduction of the OTS second dielectric layer. The results demonstrated that using inorganic/organic double insulator as the gate dielectric layer is an effective method to fabricate OTFTs with improved electric characteristics.


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