TITLE

Organic thin-film transistors having inorganic/organic double gate insulators

AUTHOR(S)
Wang, Jun; Xuanjun Yan; Yanxia Xu; Jian Zhang; Donghang Yan
PUB. DATE
November 2004
SOURCE
Applied Physics Letters;11/29/2004, Vol. 85 Issue 22, p5424
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Bottom-contact organic thin-film transistors (BC OTFTs) based on inorganic/organic double gate insulators were demonstrated. The double gate insulators consisted of tantalum pentoxide (Ta2O5) with high dielectric constant (κ) as the first gate insulator and octadecyltrichlorosilane (OTS) with low κ as the second gate insulator. The devices have carrier mobilities larger than 10-2 cm2/V s, on/off current ratio greater than 105, and the threshold voltage of -14 V, which is threefold larger field-effect mobility and an order of magnitude larger on/off current ratio than the OTFTs with a Ta2O5 gate insulator. The leakage current was decreased from 2.4×10-6 to 7.4×10-8 A due to the introduction of the OTS second dielectric layer. The results demonstrated that using inorganic/organic double insulator as the gate dielectric layer is an effective method to fabricate OTFTs with improved electric characteristics.
ACCESSION #
15244097

 

Related Articles

  • Study paves way for mass production of flexible computers. Harris, Stephen // Engineer (Online Edition);3/6/2014, p1 

    The article reports that Surrey University researchers and electronics company Phillips have developed the thin-film, source-gated-transistors (SGT) that could make it easier to manufacture flexible electronic devices. Topics discussed include the ability of the SGT to reduce the complexity of...

  • Electrical property of pentacene organic thin-film transistors with a complementary-gated structure. Jun Bin Ko; Jun-Hee Hong // Journal of Materials Science;Jun2010, Vol. 45 Issue 11, p2839 

    Organic thin-film transistors (OTFTs) are being extensively studied for the next generation electronic devices, which will require cost reduction and flexibility. In this study, OTFTs with a double-gated structure were fabricated and their electric properties depending on main and complementary...

  • Choosing the perfect TFT display: part two. Dautel, Rob // EDN;2/19/2004, Vol. 49 Issue 4, p61 

    Discusses the types of thin-film transistor (TFT) interfaces and the electronics that drive and control them. Factors to be considered in choosing TFT displays; Standard interfaces that TFT manufacturers have adopted in connecting TFT controllers; Options in driving TFT's; Discussion of some...

  • Annealing temperature dependence of effective piezoelectric coefficients for Bi3.15Eu0.85Ti3O12 thin films. Zheng, X. J.; Wu, Q. Y.; Peng, J. F.; He, L.; Feng, X.; Chen, Y. Q.; Zhang, D. Z. // Journal of Materials Science;Jun2010, Vol. 45 Issue 11, p3001 

    The effects of annealing temperatures 600, 650, 700, and 750 °C on microstructure, chemical composition, leakage current, ferroelectric, dielectric, and piezoelectric properties of Bi3.15Eu0.85Ti3O12 (BET) thin films prepared by metal–organic decomposition were studied in detail. The...

  • Solution-processed InGaZnO-based thin film transistors for printed electronics applications. Jun Hyung Lim; Jong Hyun Shim; Jun Hyuk Choi; Jinho Joo; Kyung Park; Haseok Jeon; Mi Ran Moon; Donggeun Jung; Hyoungsub Kim; Hoo-Jeong Lee // Applied Physics Letters;7/6/2009, Vol. 95 Issue 1, p012108 

    This letter reports the utility of using the sol-gel process for exploring the library of multicomponent ZnO-based oxides as an active layer of thin film transistors. We chose InGaZnO as a starting material and modulated the Ga content to examine the potential of this material. Increasing the Ga...

  • High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer. Chiang, H. Q.; Wager, J. F.; Hoffman, R. L.; Jeong, J.; Keszler, D. A. // Applied Physics Letters;1/3/2005, Vol. 86 Issue 1, p013503 

    Transparent thin-film transistors (TTFTs) with an amorphous zinc tin oxide channel layer formed via rf magnetron sputter deposition are demonstrated. Field-effect mobilities of 5–15 and 20–50 cm2 V-1 s-1 are obtained for devices post-deposition annealed at 300 and 600 °C,...

  • Insight on the SU-8 resist as passivation layer for transparent Ga2O3-In2O3-ZnO thin-film transistors. Olziersky, Antonis; Barquinha, Pedro; Vilà, Anna; Pereira, Luís; Gonçalves, Gonçalo; Fortunato, Elvira; Martins, Rodrigo; Morante, Juan R. // Journal of Applied Physics;Oct2010, Vol. 108 Issue 6, p064505 

    A nonvacuum and low temperature process for passivating transparent metal oxides based thin-film transistors is presented. This process uses the epoxy-based SU-8 resist which prevents device degradation against environmental conditions, vacuum or sputtering surface damage. The incorporation of...

  • TFT screens come of age. Yates, Darren // Australian PC User;Dec2003, Vol. 15 Issue 12, p98 

    Deals with the developments made in thin film transistor (TFT) monitors. Response time of TFT; Resolutions; Extra features.

  • Good looking TFTs hit your energy budget. Hill, Robert // Electronics Weekly;11/28/2007, Issue 2314, p18 

    The article presents information on some lower price alternatives to colour Thin Flim Transitor (TFT). A TFT display subsystem, according to Intel Corp., can account for as much as 33-40 per cent of the power budget of a laptop, the backlight alone accounting for 75 percent of this figure. There...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics