Optical and electrical step-recovery study of minority-carrier transport in an InGaN/GaN quantum-well light-emitting diode grown on sapphire

Kaplar, R. J.; Kurtz, S. R.; Koleske, D. D.
November 2004
Applied Physics Letters;11/29/2004, Vol. 85 Issue 22, p5436
Academic Journal
Forward-to-reverse bias step-recovery experiments were performed on an InGaN/GaN single-quantum-well light-emitting diode grown on sapphire. With the quantum well sampling the minority-carrier hole density at a single position, the optical emission displayed a two-stage decay. Using a solution to the diffusion equation to self-consistently describe both the optical and electrical recovery data, we estimated values for the hole lifetime (758±44 ns), diffusion length (588±45 nm), and mobility (0.18±0.02 cm2/V s) in GaN grown on sapphire. This low value of the minority-carrier mobility may reflect trap-modulated transport, and the lifetime is suggestive of slow capture and emission processes occurring through deep levels.


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