Subwavelength multichannel imaging using a solid immersion lens: Spectroscopy of excitons in single quantum dots

Hewaparakrama, K. P.; Wilson, A.; Mackowski, S.; Jackson, H. E.; Smith, L. M.; Karczewski, G.; Kossut, J.
November 2004
Applied Physics Letters;11/29/2004, Vol. 85 Issue 22, p5463
Academic Journal
We demonstrate subwavelength imaging of excitons confined to single CdTe quantum dots. By combining slit-confocal microscopy with a hemispherical solid immersion lens, we simultaneously map the emission of thousands of single quantum dots with a spatial resolution of 400 nm. By analyzing the linear polarization of the quantum dot emissions at B=0 T, we find that the distribution of the exchange splitting is centered at zero with a standard deviation of ±340 μeV. Similar experiments performed at B=3 T give an average value of the exciton effective g factor of 3.1±0.4. This experimental approach provides an effective means to gain statistical information about the quantum-dot exciton fine structure in the ensemble.


Related Articles

  • Temperature dependence of photoluminescence characteristics of excitons in stacked quantum dots and quantum dot chains. Kojima, Osamu; Nakatani, Hiroaki; Kita, Takashi; Wada, Osamu; Akahane, Kouichi // Journal of Applied Physics;Apr2010, Vol. 107 Issue 7, p073506 

    We have investigated the effects of temperature on the photoluminescence (PL) characteristics of excitons in ordinary stacked quantum dots (QDs) and QD chains in which QDs are interconnected along the growth direction. While the temperature dependence of the PL intensity of both samples is...

  • Observation of intershell and hybridized energy states in InAs/GaAs quantum dots. Wang, F. Z.; Chen, Z. H.; Bai, L. H.; Huang, S. H.; Xiong, H.; Shen, S. C.; Sun, J.; Jin, P.; Wang, Z. G. // Applied Physics Letters;8/29/2005, Vol. 87 Issue 9, p093104 

    We have investigated the evolution of exciton state filling as a function of excitation power density in InAs/GaAs quantum dots (QDs). In addition to the emission bands of exciton recombination corresponding to the atom-like S, P, and D, etc. shells of quantum dots, it was observed that some...

  • Fine Structure of Neutral Excitons in Single GaAlAs Quantum Dots. MOLAS, M.; GOŁASA, K.; PIĘTKA, B.; POTEMSKI, M.; BABIŃSKI, A. // Acta Physica Polonica, A.;Dec2012, Vol. 122 Issue 6, p988 

    Optical anisotropy of neutral excitons in GaAlAs/AlAs quantum dots is investigated. Low-temperature polarization-sensitive photoluminescence measurements of single quantum dots are performed. It is found that neutral excitons (X) in the quantum dots exhibit a fine structure splitting. The fine...

  • Optical near-field mapping of excitons and biexcitons in naturally occurring semiconductor quantum dots. Hohenester, Ulrich; Goldoni, Guido; Molinari, Elisa // Applied Physics Letters;5/17/2004, Vol. 84 Issue 20, p3963 

    We calculate the near-field optical spectra of excitons and biexcitons in semiconductor quantum dots naturally occurring at interface fluctuations in GaAs-based quantum wells, using a nonlocal description of the response function to a spatially modulated electromagnetic field. The relative...

  • Homogeneous linewidth of the 31P bound exciton transition in silicon. Yang, A.; Steger, M.; Sekiguchi, T.; Thewalt, M. L. W.; Ager, J. W.; Haller, E. E. // Applied Physics Letters;9/21/2009, Vol. 95 Issue 12, p122113 

    The optical transitions of the shallow donor bound exciton associated with phosphorus in silicon are a subject of renewed interest due to the recent discovery that these transitions can be used to both read out and initialize the donor electron and nuclear spin in highly enriched 28Si. The...

  • Surface Recombination in ZnO Nanorods Grown by Aqueous Chemical Methods. Zhao, Q. X.; Yang, L. L.; Willander, M.; Pozina, G.; Holtz, P. O. // AIP Conference Proceedings;1/4/2010, Vol. 1199 Issue 1, p319 

    ZnO nanorods on Si substrates were prepared by either a two-steps chemical bath deposition (CBD) method or thermal evaporation technique. It was found that the effective decay time of the near bandgap recombinations strongly depends on the method, which was used to grow the ZnO nanorods. ZnO...

  • Fine structure of the trion triplet state in a single self-assembled semiconductor quantum dot. Akimov, I. A.; Hundt, A.; Flissikowski, T.; Henneberger, F. // Applied Physics Letters;12/16/2002, Vol. 81 Issue 25, p4730 

    The emission from the charged biexciton is used to monitor the energy structure of the trion triplet state in a negatively charged CdSe/ZnSe quantum dot. The isotropic part of the electron-hole exchange interaction regroups the otherwise sixfold degenerated state in three Kramers doublets. The...

  • Exciton States in Semiconductor Spherical Nanostructures. Pokutnyi, S. I. // Semiconductors;Sep2005, Vol. 39 Issue 9, p1066 

    The results of theoretical studies of the energy spectra of excitons moving in semiconductor spherical quantum dots are described. The contributions of the kinetic electron and hole energies, the energy of the Coulomb interaction between an electron and hole, and the energy of the polarization...

  • Gigahertz bandwidth electrical control over a dark exciton-based memory bit in a single quantum dot. McFarlane, J.; Dalgarno, P. A.; Gerardot, B. D.; Hadfield, R. H.; Warburton, R. J.; Karrai, K.; Badolato, A.; Petroff, P. M. // Applied Physics Letters;3/2/2009, Vol. 94 Issue 9, pN.PAG 

    An optical write-store-read process is demonstrated in a single InGaAs quantum dot within a charge-tunable device. A single dark exciton is created by nongeminate optical excitation allowing a dark exciton-based memory bit to be stored for over ∼1 μs. Read-out is performed with a...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics