Comment on “Smooth relaxed Si0.75Ge0.25 layers on Si(001) via in situ rapid thermal annealing” [Appl. Phys. Lett. 83, 4321 (2003)]

Chrastina, D.
November 2004
Applied Physics Letters;11/29/2004, Vol. 85 Issue 22, p5469
Academic Journal
Comments on an article which describes the growth and in situ annealing of thin Si[sub 0.75]Ge[sub 0.25] films. Methods that produce much better quality material than those presented by the authors of the article; Ways by which further relaxation and increased roughening can be achieved.


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