Evolution of the Electroluminescence Spectra and the Acoustic Emission of the Epitaxial Structures of GaAsP

Veleshchuk, V.P.; Lyashenko, O.V.; Myagchenko, Yu. A.; Chuprina, R.G.
July 2004
Journal of Applied Spectroscopy;Jul/Aug2004, Vol. 71 Issue 4, p553
Academic Journal
The dependence of the spectral position of the electroluminescence bands of epitaxial light‐emitting diode n+–n–p structures (GaAs0.15P0.85) on the density of a direct heterojunction current at different successive instants of time — before an acoustic emission and after it — has been revealed. The shifts of the electroluminescence bands accompanied by acoustic emission can be divided into three types according to the density of the current: (1) short‐term shifts due to relaxation of the defect structure of a sample — at relatively low currents, (2) the magnitude of the reverse shift being determined by the current density — at large currents, and (3) formation of an IR band (1.5–1.1 eV) with irreversible degradation changing in the red (1.75 eV) and green (2.19 eV) bands of the electroluminescence spectrum — at ultrahigh currents (∼100–200 A/cm2).


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