Effects of annealing temperature on electrical resistance of bonded n-GaAs wafers

Liu, Po Chun; Lu, Cheng Lun; Wu, YewChung Sermon; Cheng, Ji-Hao; Ouyang, Hao
November 2004
Applied Physics Letters;11/22/2004, Vol. 85 Issue 21, p4831
Academic Journal
The electrical characteristics and microstructures of n-type (100) GaAs bonded interfaces were systematically investigated. Experimental results indicated that GaAs did not bond directly to itself, but via an amorphous oxide layer at 400 °C. When temperatures increased above 400 °C, the oxide bonded area declined and finally disappeared. Electrical resistance decreased with bonding temperature. However, the resistance increased with temperatures exceeding 850 °C.


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