Passivation of organic light-emitting diodes with aluminum oxide thin films grown by plasma-enhanced atomic layer deposition

Yun, Sun Jin; Ko, Young-Wook; Lim, Jung Wook
November 2004
Applied Physics Letters;11/22/2004, Vol. 85 Issue 21, p4896
Academic Journal
The passivation of organic light-emitting diodes (OLEDs) with Al2O3 films containing small amounts of N (Al2O3:N) was investigated by plasma-enhanced atomic layer deposition using a direct rf plasma with a short pulse time. Luminance—voltage and current density—voltage curves of an OLED passivated with a 300 nm Al2O3:N film at 60 °C remained unchanged compared to those of nonpassivated OLED and 96% of the initial luminance were maintained even after operating for 850 h at 14 mA/cm2. The lifetime of an OLED with an 80 °C Al2O3:N film was 650 h, 6.2 times longer than that of a nonpassivated sample, although the luminance—voltage characteristics of the OLED were altered to a considerable extent.


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