Determination of the carrier concentration in InGaAsN/GaAs single quantum wells using Raman scattering

Grandt, Patrick A.; Griffith, Aureus E.; Manasreh, M. O.; Friedman, D. J.; Doğan, S.; Johnstone, D.
November 2004
Applied Physics Letters;11/22/2004, Vol. 85 Issue 21, p4905
Academic Journal
Raman scattering from longitudinal optical phonon-plasmon coupled mode was observed in a series of InGaAsN/GaAs single quantum well samples grown by metalorganic vapor phase epitaxy. The phonon-plasmon mode spectra were fitted with the dielectric constant function based on Drude model that contains contributions from both lattice vibrations and conduction electrons. The carrier concentration is calculated directly from the plasmon frequency, which is obtained from the fitting procedure. An empirical expression for the electron concentration, [n], in InGaAsN/GaAs samples is determined as [n]≈{2.35×1016(ωm-502)}cm-3, where ωm is the peak of the upper frequency branch, L+, of the phonon-plasmon mode measured in unit of cm-1. The phonon-plasmon coupled mode was also investigated in rapid thermally annealed samples.


Related Articles

  • Stimulated resonance Raman scattering from epitaxially oriented crystals of biphenyl-capped thiophene. Yanagi, Hisao; Yoshiki, Atsutoshi // Applied Physics Letters;6/7/2004, Vol. 84 Issue 23, p4783 

    Spectrally narrowed light emission based on stimulated resonance Raman scattering has been observed for epitaxially grown needle crystals of a biphenyl-capped thiophene oligomer. Under optical pumping with a wavelength-tuned pulse laser, the crystals emitted a couple of sharp lines (full width...

  • Localized surface plasmon singularities in amplifying media. Lawandy, N. M. // Applied Physics Letters;11/22/2004, Vol. 85 Issue 21, p5040 

    The localized surface plasmon resonance of nanostructures is shown to exhibit a singularity when the surrounding medium exhibits amplification with a critical value of gain. This singularity can lead to large enhancements even when the gain is saturated. This composite medium should exhibit...

  • Precision of single-qubit gates based on Raman transitions. Caillet, X.; Simon, C. // European Physical Journal D -- Atoms, Molecules, Clusters & Opti;May2007, Vol. 42 Issue 2, p341 

    We analyze the achievable precision for single-qubit gates that are based on off-resonant Raman transitions between two near-degenerate ground states via a virtually excited state. In particular, we study the errors due to non-perfect adiabaticity and due to spontaneous emission from the excited...

  • Angle dependence of two-wave mixing efficiency in photorefractive multiple quantum wells. Gramlich, Michael; Balasubramanian, Sunder; Ping Yu // Applied Physics Letters;11/27/2006, Vol. 89 Issue 22, p222106 

    The authors have investigated how two-wave mixing efficiency changes as a function of angle tuning while crossing over from the Raman-Nath diffraction to the Bragg diffraction in AlGaAs/GaAs photorefractive multiple quantum wells (PRQWs). They have shown that by changing the inclination angle of...

  • Structural and optical properties of nanocrystalline Zn1-xMnxO. Samanta, K.; Dussan, S.; Katiyar, R. S.; Bhattacharya, P. // Applied Physics Letters;6/25/2007, Vol. 90 Issue 26, p261903 

    The multi phonon Raman scattering in Mn doped (1%–10%) ZnO was observed at room temperature using 514.5 nm Ar+ laser. The additional optical modes at 327, 332, 482, 532, and 680 cm-1 in Zn1-xMnxO targets were identified as the second order Raman modes in the disordered lattice and the...

  • Raman spectroscopy of self-assembled Ge islands on Si. Yang, T. R.; Dvoynenko, M. M.; Feng, Z. C.; Cheng, H. H. // European Physical Journal B -- Condensed Matter;Jan2003, Vol. 31 Issue 1, p41 

    : We present a Raman scattering study for self-organized Ge dots on Si substrate. By means of difference Raman spectroscopy technique, we have separated the Raman signals from the Ge islands and Si substrate. The wetting layer thickness and strain were estimated from the line width and peak...

  • Incoherent resonant tunneling without reflection in asymmetric double-barrier structures. Kan, S. C.; Yariv, A. // Journal of Applied Physics;4/15/1990, Vol. 67 Issue 8, p3892 

    Presents a study which modelled the scattering process inside the quantum well, which destroy the coherency of the wavefunction of the electron in a double-carrier resonant tunneling structure. Information on the double barrier structures examined; Information on the reflection coefficient of...

  • Light scattering determination of subband structure and population of modulation-doped multiple quantum wells. Richards, D.; Fasol, G.; Ploog, K. // Applied Physics Letters;4/23/1990, Vol. 56 Issue 17, p1649 

    We show that electronic Raman scattering measurements of the plasmon dispersion in combination with calculations of the random phase approximation dielectric response and self-consistent electronic subband calculations can determine the subband structure and populations of modulation-doped...

  • One-dimensional theory and simulation of acceleration in relativistic electron beam Raman scattering. Abe, Takashi // Physics of Fluids (00319171);Oct86, Vol. 29 Issue 10, p3394 

    Raman scattering by a parallel relativistic electron beam was examined analytically and by using the numerical simulation. Incident wave energy can be transferred not only to the scattered electromagnetic wave but also to the beam. That is, the beam can be accelerated by the Doppler-shifted...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics