Determination of composition and strain field of a III/V quaternary quantum dot system

Otto, R.; Kirmse, H.; Häusler, I.; Neumann, W.; Rosenauer, A.; Bimberg, D.; Müller-Kirsch, L.
November 2004
Applied Physics Letters;11/22/2004, Vol. 85 Issue 21, p4908
Academic Journal
A system composed of a double layer of stacked quantum dots (QDs) of (In,Ga)As and Ga(Sb,As) was investigated by quantitative high-resolution transmission electron microscopy. The layers were grown by metalorganic chemical vapor deposition on a GaAs substrate. The strain field of the lower quantum dots determines the nucleation in the subsequent layer. Investigating this effect, the strain field as well as the composition could be measured at high resolution. Local changes of lattice distances could be quantified with a precision of 0.003 nm. The error in determining the local composition inside the InxGa1-xAs resp., GaSbyAs1-y QDs amounts to ΔxIn=0.02 and ΔySb=0.03.


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