TITLE

The generation of misfit dislocations in facet-controlled growth of AlGaN/GaN films

AUTHOR(S)
Cherns, D.; Sahonta, S.-L.; Liu, R.; Ponce, F. A.; Amano, H.; Akasaki, I.
PUB. DATE
November 2004
SOURCE
Applied Physics Letters;11/22/2004, Vol. 85 Issue 21, p4923
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The relaxation of tensile stresses in AlGaN layers grown on GaN/(0001)sapphire by facet-controlled epitaxial lateral overgrowth is reported. It is shown that α-type misfit dislocations are introduced at inclined {1122} AlGaN/Gan interfaces, with strong evidence for a half-loop nucleation and glide mechanism driven by shear stresses present on the (0001) slip plane. In addition to relieving misfit stresses, these dislocations introduce grain rotations of up to 10-2 rad across the AlGaN/GaN boundaries, leading to tilt boundaries at the meeting front between laterally growing wings and between regions growing in the lateral and [0001] directions. The effects of these processes on the defect density in subsequent layers are examined.
ACCESSION #
15155566

 

Related Articles

  • Structure of pentacene thin films. Ruiz, Ricardo; Mayer, Alex C.; Malliaras, George G.; Nickel, Bert; Scoles, Giacinto; Kazimirov, Alexander; Kim, Hyunjung; Headrick, Randall L.; Islam, Zahirul // Applied Physics Letters;11/22/2004, Vol. 85 Issue 21, p4926 

    Grazing incidence x-ray diffraction, x-ray reflectivity and atomic force microscopy have been performed to study the structure of pentacene thin films on oxidized Si substrates from submonolayer to multilayer coverages. The volume of the unit cell in the thin film phase is almost identical to...

  • Trimming Si surfaces for molecular electronics. Caldas, M. J.; Calzolari, A.; Cucinotta, C. S. // Journal of Applied Physics;4/15/2007, Vol. 101 Issue 8, p081719 

    In the last two decades significant progress has been made in developing methodologies (fabrication and analysis) for organic functionalization of semiconductors, in view of applications in molecular electronics, nano-bio devices, and surface nanopatterning in general. A strategic route is the...

  • The structure, energetics, and nature of the chemical bonding of phenylthiol adsorbed on the Au(111) surface: Implications for density-functional calculations of molecular-electronic conduction. Bilic, Ante; Reimers, Jeffrey R.; Hush, Noel S. // Journal of Chemical Physics;3/1/2005, Vol. 122 Issue 9, p094708 

    The adsorption of phenylthiol on the Au(111) surface is modeled using Perdew and Wang density-functional calculations. Both direct molecular physisorption and dissociative chemisorption via S–H bond cleavage are considered as well as dimerization to form disulfides. For the major observed...

  • Ab-initio and Multiscale Study of Surface Stresses from Alkanethiolate Self-Assembled Monolayers on Gold. Chuin-Shan Chen; Chia-Ching Chou; Shu-Wei Chang // AIP Conference Proceedings;5/21/2010, Vol. 1233 Issue 1, p499 

    The self-assembled monolayers (SAMs) absorbed on surface attract much attention due to their diverse applications for biosensing, biorecognition and molecular electronics. In this work, we study absorption-induced surface stresses and microcantilever motion in Alkanethiolate SAMs on Au surface....

  • Fabrication and characterization of an indium tin oxide-octadecanethiol-aluminum junction for molecular electronics. Kolipaka, Shailender; Aithal, Rajendra K.; Kuila, Debasish // Applied Physics Letters;6/5/2006, Vol. 88 Issue 23, p233104 

    In order to create a different avenue for molecular electronics, metal-molecule-metal junctions are reported for 1-octadecanethiol (ODT) self-assembled monolayers on indium tin oxide surface using thermal/electron beam evaporated aluminum as top contact. The bottom electrode is patterned to 10...

  • Effective masses and complex dielectric function of cubic HfO2. Garcia, J. C.; Scolfaro, L. M. R.; Leite, J. R.; Lino, A. T.; Freire, V. N.; Farias, G. A.; da Silva, E. F. // Applied Physics Letters;11/22/2004, Vol. 85 Issue 21, p5022 

    The electronic band structure of cubic HfO2 is calculated using an ab initio all-electron self-consistent linear augmented plane-wave method, within the framework of the local-density approximation and taking into account full-relativistic contributions. From the band structure, the carrier...

  • Megasonic-assisted development of nanostructures: Investigations on high aspect ratio nanoholes. Küpper, David; Küpper, Daniel; Georgiev, Yordan M.; Wahlbrink, Thorsten; Henschel, Wolfgang; Bell, Guido; Kurz, Heinrich // Applied Physics Letters;11/22/2004, Vol. 85 Issue 21, p5055 

    The influence of megasonic agitation on the development of nanostructures with high aspect ratio is investigated thoroughly. The improvements in homogeneity, depth, and quality of nanostructures are related to specific interactions of the sound wave with the resist and developer. Two phases in...

  • Dual role of fluorine at the Si–SiO2 interface. Tsetseris, L.; Zhou, X. J.; Fleetwood, D. M.; Schrimpf, R. D.; Pantelides, S. T. // Applied Physics Letters;11/22/2004, Vol. 85 Issue 21, p4950 

    Fluorine is known to have both a beneficial and adverse role on the characteristics of Si–SiO2-based devices. Here we report the results of first-principles calculations in terms of which we elucidate this dual behavior. On one hand, we find that Si–F interfacial bonds are...

  • Strain hardening and large tensile elongation in ultrahigh-strength nano-twinned copper. Ma, E.; Wang, Y. M.; Lu, Q. H.; Sui, M. L.; Lu, L.; Lu, K. // Applied Physics Letters;11/22/2004, Vol. 85 Issue 21, p4932 

    A high density of growth twins in pure Cu imparts high yield strength while preserving the capacity for efficient dislocation storage, leading to high strain hardening rates at high flow stresses, especially at 77 K. Uniform tensile deformation is stabilized to large plastic strains, resulting...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics