The generation of misfit dislocations in facet-controlled growth of AlGaN/GaN films

Cherns, D.; Sahonta, S.-L.; Liu, R.; Ponce, F. A.; Amano, H.; Akasaki, I.
November 2004
Applied Physics Letters;11/22/2004, Vol. 85 Issue 21, p4923
Academic Journal
The relaxation of tensile stresses in AlGaN layers grown on GaN/(0001)sapphire by facet-controlled epitaxial lateral overgrowth is reported. It is shown that α-type misfit dislocations are introduced at inclined {1122} AlGaN/Gan interfaces, with strong evidence for a half-loop nucleation and glide mechanism driven by shear stresses present on the (0001) slip plane. In addition to relieving misfit stresses, these dislocations introduce grain rotations of up to 10-2 rad across the AlGaN/GaN boundaries, leading to tilt boundaries at the meeting front between laterally growing wings and between regions growing in the lateral and [0001] directions. The effects of these processes on the defect density in subsequent layers are examined.


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