Plasma hydrogenation of strain-relaxed SiGe/Si heterostructure for layer transfer

Chen, Peng; Chu, Paul K.; Höchbauer, T.; Nastasi, M.; Buca, D.; Mantl, S.; Theodore, N. David; Alford, T. L.; Mayer, J. W.; Loo, R.; Caymax, M.; Cai, M.; Lau, S. S.
November 2004
Applied Physics Letters;11/22/2004, Vol. 85 Issue 21, p4944
Academic Journal
The use of plasma hydrogenation for relaxed SiGe layer transfer is demonstrated. It is found that the interface of a strain-relaxed SiGe/Si heterostructure is effective in trapping H during plasma hydrogenation. Long microcracks observed at the interface due to the trapping of indiffused H indicate the distinct possibility of transferring the overlayer using the ion-cutting technique. Our results suggest that interfacial defects induced by the He implantation relaxation process trap the indiffusing H atoms and lead to interfacial cracks during hydrogenation or upon postannealing at higher temperatures. It is further noted that trapping of H at the interface is possible only in strain-relaxed structures. Without strain relaxation, H atoms introduced by plasma hydrogenation get trapped just below the sample surface and form a band of shallow platelets. Without the need for high-dose high-energy ion implantation, our results suggest an effective way for high-quality strain-relaxed SiGe layer transfer. The technique has potential for application in the fabrication of SiGe-on-insulator strained Si epitaxial layer and related structures.


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