Effect of encapsulation temperature on Si:P δ-doped layers

Goh, K. E. J.; Oberbeck, L.; Simmons, M. Y.; Hamilton, A. R.; Clark, R. G.
November 2004
Applied Physics Letters;11/22/2004, Vol. 85 Issue 21, p4953
Academic Journal
We present a systematic study of the effect of encapsulation temperature on dopant segregation and electronic transport in Si:P δ-doped layers. We demonstrate that while limited dopant segregation and complete electrical activation can be achieved at room temperature, a δ-doped layer encapsulated at ∼250°C represents the best compromise between high electrical quality (mobility ∼61 cm2 V-1 s-1 and phase coherence length ∼72 nm at 4.2 K) and minimal dopant segregation. Higher encapsulation temperatures are shown to lead to significant dopant segregation.


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