Highly resistive annealed low-temperature-grown InGaAs with sub-500 fs carrier lifetimes

Baker, C.; Gregory, I. S.; Tribe, W. R.; Bradley, I. V.; Evans, M. J.; Linfield, E. H.; Missous, M.
November 2004
Applied Physics Letters;11/22/2004, Vol. 85 Issue 21, p4965
Academic Journal
We have optimized low-temperature-grown In0.3Ga0.7As for use in ultrafast photoconductive devices. Using low temperature ex situ annealing techniques, we have produced a photoconductive material that is highly resistive (∼104 Ω cm), has sub-500 fs carrier trapping lifetimes, and is matched to 1.06 μm laser excitation.


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