TITLE

Large magnetoresistance effects near room temperature in manganite heterojunction

AUTHOR(S)
Sun, J. R.; Xiong, C. M.; Shen, B. G.
PUB. DATE
November 2004
SOURCE
Applied Physics Letters;11/22/2004, Vol. 85 Issue 21, p4977
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Magnetoresistive property of a heterojunction composed of Pr0.6Ca0.4MnO3 (PCMO) and Nb-doped SrTiO3 (STON) has been experimentally studied. A rather complex current–voltage relation characterized by the appearance of a low-bias electric breakdown prior to the reverse current saturation process is observed. The magnetic field shows a strong depression to this electric breakdown and, as a result, leads to a great change of junction resistance. It is interesting that the magnetoresistance thus produced, remains huge, ∼1600% under a field of 5 T [defined as R(H)/R(0)-1], in a broad temperature range well above the Curie temperature of PCMO, which indicates a different mechanism of the magnetic field effect of PCMO/STON from other manganites and manganite-based heterojunctions. A qualitative explanation is given based on an analysis about the influence of interfacial defects on Hall electric field.
ACCESSION #
15155548

 

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