TITLE

Self-assembled carbon-nanotube-based field-effect transistors

AUTHOR(S)
Hazani, Miron; Shvarts, Dmitry; Peled, Dana; Sidorov, Victor; Naaman, Ron
PUB. DATE
November 2004
SOURCE
Applied Physics Letters;11/22/2004, Vol. 85 Issue 21, p5025
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Self-assembled carbon-nanotube-based field-effect transistors (CNTFETs) were produced with high yield using the natural process of DNA hybridization. In principle, the devices made by this method behave like those made using direct metal-carbon nanotube contacts. The inverse subthreshold slope of the CNTFETs depends on the source-drain voltage applied to the device, confirming that the conductance of CNTFETs is determined by the Schottky barriers at the interfaces between the CNTs and the gold electrodes.
ACCESSION #
15155532

 

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