Room-temperature tunable microwave properties of strained SrTiO3 films

Wontae Chang; Kirchoefer, Steven W.; Pond, Jeffrey M.; Bellotti, Jeffrey A.; Qadri, Syed B.; Haeni, Jeffrey H.; Schlom, Darrell G.
December 2004
Journal of Applied Physics;12/1/2004, Vol. 96 Issue 11, p6629
Academic Journal
Structural distortion of ferroelectric thin films caused by film strain has a strong impact on the microwave dielectric properties. SrTiO3 thin films epitaxially grown on (110) DyScO3 substrates using molecular beam epitaxy are extremely strained (i.e., ∼1% in-plane tensional strain) from 3.905 Å of bulk SrTiO3. The room-temperature in-plane dielectric constant and its tuning of the films at 10 GHz are observed to be 6000 and 75% with an electric field of 1 V/μm, respectively. The control of strain in SrTiO3 provides a basis for room-temperature tunable microwave applications by elevating its phase-transition peak to room temperature.


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