TITLE

Analytical investigations of tunnel magnetoresistance layers

AUTHOR(S)
Thomas, Jürgen; Reiche, Rainer; Vinzelberg, Hartmut
PUB. DATE
June 2004
SOURCE
Analytical & Bioanalytical Chemistry;Jun2004, Vol. 379 Issue 4, p576
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The basic elements of tunnel magnetoresists are two magnetic layers separated by an insulating barrier layer. The uniformity of this only 1–2 nm thick barrier layer up to dot edges and the chemical composition of the layers are properties important for the efficiency of tunnel magnetoresistance devices. These key-properties have been investigated by analytical TEM methods like high resolution TEM imaging and energy-filtered imaging. With regard to the chemical composition the TEM results have been confirmed by XPS investigations. The subsequent oxidation of the barrier is one of the most critical steps of the deposition procedure of the layer stacks. An undersized oxygen dose leads to an incomplete oxidation of the barrier layer with uncontrollable tunnel behaviour. An overdose of oxygen leads to oxygen diffusion in the layers beneath the barrier and uncontrollable magnetic hardness of the lower magnetic electrode.
ACCESSION #
15125126

 

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